Citation: K. Teii, Soft ion impact for surface activation during diamond chemical-vapor deposition on diamond and silicon - art. no. 125327, PHYS REV B, 6412(12), 2001, pp. 5327
Citation: K. Teii et al., Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond, J APPL PHYS, 89(9), 2001, pp. 4714-4718
Citation: K. Teii et al., Negative bias dependence of sulfur and fluorine incorporation in diamond films etched by an SF6 plasma, J ELCHEM SO, 148(2), 2001, pp. G55-G58
Citation: K. Teii et al., Codeposition on diamond film surface during reactive ion etching in SF6 and O-2 plasmas, J VAC SCI A, 18(6), 2000, pp. 2779-2784
Authors:
Ito, K
Teii, K
Ishikawa, M
Ito, M
Hori, M
Takeo, T
Kato, T
Goto, T
Citation: K. Ito et al., Diamond deposition and behavior of atomic carbon species in a low-pressureinductively coupled plasma, JPN J A P 1, 38(7B), 1999, pp. 4504-4507
Citation: K. Teii, Diagnostics of the diamond depositing inductively coupled plasma by electrostatic probes and optical emission spectroscopy, J VAC SCI A, 17(1), 1999, pp. 138-143