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Results: 1-8 |
Results: 8
Strong discontinuities in the complex photonic band structure of transmission metallic gratings - art. no. 033107
Authors: Collin, S Pardo, F Teissier, R Pelouard, JL
Citation: S. Collin et al., Strong discontinuities in the complex photonic band structure of transmission metallic gratings - art. no. 033107, PHYS REV B, 6303(3), 2001, pp. 3107
Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission
Authors: Harmand, JC Ungaro, G Ramos, J Rao, EVK Saint-Girons, G Teissier, R Le Roux, G Largeau, L Patriarche, G
Citation: Jc. Harmand et al., Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission, J CRYST GR, 227, 2001, pp. 553-557
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
Authors: Teissier, R Sicault, D Harmand, JC Ungaro, G Le Roux, G Largeau, L
Citation: R. Teissier et al., Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs, J APPL PHYS, 89(10), 2001, pp. 5473-5477
Mg- and Ni-containing layered double hydroxides as soda substitutes in thealdol condensation of acetone
Authors: Prinetto, F Tichit, D Teissier, R Coq, B
Citation: F. Prinetto et al., Mg- and Ni-containing layered double hydroxides as soda substitutes in thealdol condensation of acetone, CATAL TODAY, 55(1-2), 2000, pp. 103-116
Impact ionization in InAlAs/InP single channel heterojunction field effecttransistors
Authors: Gautier-Levine, A Teissier, R Nezzari, A Rao, E Decobert, J Pelouard, JL Scavennec, A
Citation: A. Gautier-levine et al., Impact ionization in InAlAs/InP single channel heterojunction field effecttransistors, JPN J A P 2, 38(5B), 1999, pp. L560-L562
Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching
Authors: Manin-Ferlazzo, L Carcenac, F Teissier, R Faini, G Mailly, D
Citation: L. Manin-ferlazzo et al., Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching, MICROEL ENG, 46(1-4), 1999, pp. 331-334
GaAsSbN: a new low-bandgap material for GaAs substrates
Authors: Ungaro, G Le Roux, G Teissier, R Harmand, JC
Citation: G. Ungaro et al., GaAsSbN: a new low-bandgap material for GaAs substrates, ELECTR LETT, 35(15), 1999, pp. 1246-1248
Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path
Authors: Teissier, R Sicault, D Goujon, A Pelouard, JL Pardo, F Mollot, F
Citation: R. Teissier et al., Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path, APPL PHYS L, 75(1), 1999, pp. 103-105
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