Authors:
Temple-Boyer, P
Launay, J
Hajji, B
Sarrabayrouse, G
Martinez, A
Citation: P. Temple-boyer et al., Study of capacitive structures for amplifying the sensitivity of FET-basedchemical sensors, SENS ACTU-B, 78(1-3), 2001, pp. 285-290
Authors:
Jalabert, L
Temple-Boyer, P
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Voillot, F
Armand, C
Citation: L. Jalabert et al., Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer, MICROEL REL, 41(7), 2001, pp. 981-985
Authors:
Gall-Borrut, P
Belier, B
Falgayrettes, P
Castagne, M
Bergaud, C
Temple-Boyer, P
Citation: P. Gall-borrut et al., Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy, J MICROSC O, 202, 2001, pp. 34-38
Authors:
Temple-Boyer, P
Jalabert, L
Masarotto, L
Alay, JL
Morante, JR
Citation: P. Temple-boyer et al., Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia, J VAC SCI A, 18(5), 2000, pp. 2389-2393
Authors:
Jalabert, L
Temple-Boyer, P
Olivie, F
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Citation: L. Jalabert et al., Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures, MICROEL REL, 40(4-5), 2000, pp. 597-600
Authors:
Nicu, L
Temple-Boyer, P
Bergaud, C
Scheid, E
Martinez, A
Citation: L. Nicu et al., Energy study of buckled micromachined beams for thin-film stress measurements applied to SiO2, J MICROM M, 9(4), 1999, pp. 414-421
Authors:
Temple-Boyer, P
Hajji, B
Alay, JL
Morante, JR
Martinez, A
Citation: P. Temple-boyer et al., Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture, SENS ACTU-A, 74(1-3), 1999, pp. 52-55
Authors:
Hajji, B
Temple-Boyer, P
Olivie, F
Martinez, A
Citation: B. Hajji et al., Electrical characterisation of thin silicon oxynitride films deposited by low pressure chemical vapour deposition, THIN SOL FI, 354(1-2), 1999, pp. 9-12
Authors:
Paillard, V
Puech, P
Temple-Boyer, P
Caussat, B
Scheid, E
Couderc, JP
de Mauduit, B
Citation: V. Paillard et al., Improved characterization of polycrystalline silicon film, by resonant Raman scattering, THIN SOL FI, 337(1-2), 1999, pp. 93-97