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Results: 1-11 |
Results: 11

Authors: Park, S Tenne, DA Salvan, G Kampen, TU Zahn, DRT
Citation: S. Park et al., Optical spectroscopy during growth of PTCDA-C-60 complex thin films, J PHYS CH B, 105(48), 2001, pp. 12076-12081

Authors: Tenne, DA Haisler, VA Bakarov, AK Toropov, AI Gutakovsky, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy, PHYS ST S-B, 224(1), 2001, pp. 25-29

Authors: Salvan, G Tenne, DA Kampen, TU Scholz, R Jungnickel, G Frauenheim, T Zahn, DRT
Citation: G. Salvan et al., Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylene-tetracarboxylic-dianhydride/GaAs heterostructures, APPL SURF S, 179(1-4), 2001, pp. 113-117

Authors: Tenne, DA Clark, AM James, AR Chen, K Xi, XX
Citation: Da. Tenne et al., Soft phonon modes in Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy, APPL PHYS L, 79(23), 2001, pp. 3836-3838

Authors: Kampen, TU Salvan, G Friedrich, M Tenne, DA Park, S Zahn, DRT
Citation: Tu. Kampen et al., Optical characterisation of PTCDA films grown on passivated semiconductor substrates, APPL SURF S, 166(1-4), 2000, pp. 387-391

Authors: Tenne, DA Park, S Kampen, TU Das, A Scholz, R Zahn, DRT
Citation: Da. Tenne et al., Single crystals of the organic semiconductor perylene tetracarboxylic dianhydride studied by Raman spectroscopy, PHYS REV B, 61(21), 2000, pp. 14564-14569

Authors: Tenne, DA Haisler, VA Toropov, AI Bakarov, AK Gutakovsky, AK Zahn, DRT Shebanin, AP
Citation: Da. Tenne et al., Raman study of self-assembled GaAs and AlAs islands embedded in InAs, PHYS REV B, 61(20), 2000, pp. 13785-13790

Authors: Tenne, DA Haisler, VA Moshegov, NT Toropov, AI Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy, EUR PHY J B, 8(3), 1999, pp. 371-376

Authors: Gaisler, VA Toropov, AI Bakarov, AK Kalagin, AK Moshegov, NT Tenne, DA Kachanova, MM Kopp, OR Nenasheva, LA Medvedev, AS
Citation: Va. Gaisler et al., Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells, TECH PHYS L, 25(10), 1999, pp. 775-777

Authors: Kampen, TU Tenne, DA Park, S Salvan, G Scholz, R Zahn, DRT
Citation: Tu. Kampen et al., Raman monitoring of organic semiconductor heterostructure formation, PHYS ST S-B, 215(1), 1999, pp. 431-434

Authors: Tenne, DA Gaisler, VA Bakarov, AK Toropov, AI Gutakovskii, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix, JETP LETTER, 70(7), 1999, pp. 469-475
Risultati: 1-11 |