Authors:
Tenne, DA
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Toropov, AI
Gutakovsky, AK
Shebanin, AP
Zahn, DRT
Citation: Da. Tenne et al., Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy, PHYS ST S-B, 224(1), 2001, pp. 25-29
Authors:
Salvan, G
Tenne, DA
Kampen, TU
Scholz, R
Jungnickel, G
Frauenheim, T
Zahn, DRT
Citation: G. Salvan et al., Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylene-tetracarboxylic-dianhydride/GaAs heterostructures, APPL SURF S, 179(1-4), 2001, pp. 113-117
Authors:
Kampen, TU
Salvan, G
Friedrich, M
Tenne, DA
Park, S
Zahn, DRT
Citation: Tu. Kampen et al., Optical characterisation of PTCDA films grown on passivated semiconductor substrates, APPL SURF S, 166(1-4), 2000, pp. 387-391
Authors:
Tenne, DA
Park, S
Kampen, TU
Das, A
Scholz, R
Zahn, DRT
Citation: Da. Tenne et al., Single crystals of the organic semiconductor perylene tetracarboxylic dianhydride studied by Raman spectroscopy, PHYS REV B, 61(21), 2000, pp. 14564-14569
Authors:
Tenne, DA
Haisler, VA
Moshegov, NT
Toropov, AI
Shebanin, AP
Zahn, DRT
Citation: Da. Tenne et al., Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy, EUR PHY J B, 8(3), 1999, pp. 371-376
Authors:
Gaisler, VA
Toropov, AI
Bakarov, AK
Kalagin, AK
Moshegov, NT
Tenne, DA
Kachanova, MM
Kopp, OR
Nenasheva, LA
Medvedev, AS
Citation: Va. Gaisler et al., Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells, TECH PHYS L, 25(10), 1999, pp. 775-777