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Results: 5

Authors: Theiss, SK Caturla, MJ Johnson, MD Zhu, J Lenosky, T Sadigh, B de la Rubia, TD
Citation: Sk. Theiss et al., Atomic scale models of ion implantation and dopant diffusion in silicon, THIN SOL FI, 365(2), 2000, pp. 219-230

Authors: Lenosky, TJ Sadigh, B Theiss, SK Caturla, MJ de la Rubia, TD
Citation: Tj. Lenosky et al., Ab initio energetics of boron-interstitial clusters in crystalline Si, APPL PHYS L, 77(12), 2000, pp. 1834-1836

Authors: Lau, JT Prybyla, JA Theiss, SK
Citation: Jt. Lau et al., In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects, APPL PHYS L, 76(2), 2000, pp. 164-166

Authors: Sadigh, B Lenosky, TJ Theiss, SK Caturla, MJ de la Rubia, TD Foad, MA
Citation: B. Sadigh et al., Mechanism of boron diffusion in silicon: An ab initio and kinetic Monte Carlo study, PHYS REV L, 83(21), 1999, pp. 4341-4344

Authors: Chu, X Prybyla, JA Theiss, SK Marcus, MA
Citation: X. Chu et al., Crystallographic study of electromigration failure sites in submicron Al(Cu) interconnects, APPL PHYS L, 75(24), 1999, pp. 3790-3792
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