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Results: 1-11 |
Results: 11
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Authors: Harris, JJ Lee, KJ Wang, T Sakai, S Bougrioua, Z Moerman, I Thrush, EJ Webb, JB Tang, H Martin, T Maude, DK Portal, JC
Citation: Jj. Harris et al., Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures, SEMIC SCI T, 16(5), 2001, pp. 402-405
Material optimisation for AlGaN/GaN HFET applications
Authors: Bougrioua, Z Moerman, I Sharma, N Wallis, RH Cheyns, J Jacobs, K Thrush, EJ Considine, L Beanland, R Farvacque, JL Humphreys, C
Citation: Z. Bougrioua et al., Material optimisation for AlGaN/GaN HFET applications, J CRYST GR, 230(3-4), 2001, pp. 573-578
Observation of thermally activated conduction at a GaN-sapphire interface
Authors: Mavroidis, C Harris, JJ Kappers, MJ Sharma, N Humphreys, CJ Thrush, EJ
Citation: C. Mavroidis et al., Observation of thermally activated conduction at a GaN-sapphire interface, APPL PHYS L, 79(8), 2001, pp. 1121-1123
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Authors: Stafford, A Irvine, SJC Bougrioua, Z Jacobs, K Moerman, I Thrush, EJ Considine, L
Citation: A. Stafford et al., Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry, J CRYST GR, 221, 2000, pp. 142-148
Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design
Authors: Pawlowski, RP Theodoropoulos, C Salinger, AG Mountziaris, TJ Moffat, HK Shadid, JN Thrush, EJ
Citation: Rp. Pawlowski et al., Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design, J CRYST GR, 221, 2000, pp. 622-628
Indium segregation in InGaN quantum-well structures
Authors: Duxbury, N Bangert, U Dawson, P Thrush, EJ Van der Stricht, W Jacobs, K Moerman, I
Citation: N. Duxbury et al., Indium segregation in InGaN quantum-well structures, APPL PHYS L, 76(12), 2000, pp. 1600-1602
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
Authors: Duxbury, N Dawson, P Bangert, U Thrush, EJ van der Stricht, W Jacobs, K Moerman, I
Citation: N. Duxbury et al., Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD, PHYS ST S-B, 216(1), 1999, pp. 355-359
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Bougrioua, Z Farvacque, JL Moerman, I Demeester, P Harris, JJ Lee, K van Tendeloo, G Lebedev, O Thrush, EJ
Citation: Z. Bougrioua et al., Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE, PHYS ST S-B, 216(1), 1999, pp. 571-576
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD
Authors: Harris, JJ Lee, KJ Harrison, I Flannery, LB Korakakis, D Cheng, TS Foxon, CT Bougrioua, Z Moerman, I Van der Stricht, W Thrush, EJ Hamilton, B Ferhah, K
Citation: Jj. Harris et al., Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD, PHYS ST S-A, 176(1), 1999, pp. 363-367
Growth and in situ monitoring of GaN using IR interference effects
Authors: Considine, L Thrush, EJ Crawley, JA Jacobs, K Van der Stricht, W Moerman, I Demeester, P Park, GH Hwang, SJ Song, JJ
Citation: L. Considine et al., Growth and in situ monitoring of GaN using IR interference effects, J CRYST GR, 195(1-4), 1998, pp. 192-198
Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor
Authors: Vanhollebeke, K Considine, L Moerman, I Demeester, P Thrush, EJ Crawley, JA
Citation: K. Vanhollebeke et al., Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor, J CRYST GR, 195(1-4), 1998, pp. 644-647
Risultati: 1-11 |