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Results:
1-13
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Results: 13
Authors:
Thurzo, I
Gmucova, K
Orlicky, J
Pavlasek, J
Citation: I. Thurzo et al., Exemplifying performance of kinetics-sensitive double-step voltcoulometry:redox reactions of protons in unsupported acids, J ELEC CHEM, 514(1-2), 2001, pp. 26-34
Authors:
Thurzo, I
Zahn, DRT
Dua, AK
Citation: I. Thurzo et al., Charge deep-level transient spectroscopy of Al/intrinsic diamond/p(+)-Si Schottky diodes, SEMIC SCI T, 16(7), 2001, pp. 527-533
Authors:
Harmatha, L
Stuchlikova, L
Csabay, O
Thurzo, I
Gornik, E
Strasser, G
Citation: L. Harmatha et al., Determination of the 2D-Electron gas density in a quantum well from C-T and C-V measurements, PHYS ST S-A, 183(2), 2001, pp. 391-397
Authors:
Thurzo, I
Beyer, R
Zahn, DRT
Citation: I. Thurzo et al., Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopies, SEMIC SCI T, 15(4), 2000, pp. 378-385
Dielectric properties of ceria and yttria-stabilized zirconia thin films grown on silicon substrates
Authors:
Hartmanova, M
Gmucova, K
Thurzo, I
Citation: M. Hartmanova et al., Dielectric properties of ceria and yttria-stabilized zirconia thin films grown on silicon substrates, SOL ST ION, 130(1-2), 2000, pp. 105-110
Authors:
Bayer, R
Burghardt, H
Thurzo, I
Zahn, DRT
Gessner, T
Citation: R. Bayer et al., A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition, SOL ST ELEC, 44(8), 2000, pp. 1463-1470
Authors:
Thurzo, I
Nadazdy, V
Kumeda, M
Shimizu, T
Citation: I. Thurzo et al., Observation of a band of fast responding metastable deep traps for charge carriers in crystalline Si(n)/SiNx: H/amorphous Si : H/Al structures, J NON-CRYST, 277(2-3), 2000, pp. 207-218
Authors:
Nadazdy, V
Durny, R
Pincik, E
Thurzo, I
Kumeda, M
Shimizu, T
Citation: V. Nadazdy et al., Spatial distribution of dangling bonds in undoped hydrogenated amorphous silicon observed by solid-state voltcoulometry, J NON-CRYST, 266, 2000, pp. 558-564
Authors:
Hartmanova, M
Gmucova, K
Jergel, M
Thurzo, I
Kundracik, F
Brunel, M
Citation: M. Hartmanova et al., Structural and electrical properties of double-layer ceria/yttria stabilized zirconia deposited on silicon substrate, SOL ST ION, 119(1-4), 1999, pp. 85-90
Authors:
Hartmanova, M
Gmucova, K
Jergel, M
Thurzo, I
Kundracik, F
Brunel, M
Citation: M. Hartmanova et al., Characterization of ceria yttria stabilized zirconia grown on silicon substrate, THIN SOL FI, 345(2), 1999, pp. 330-337
Authors:
Thurzo, I
Gmucova, K
Orlicky, J
Pavlasek, J
Citation: I. Thurzo et al., Introduction to a kinetics-sensitive double-step voltcoulometry, REV SCI INS, 70(9), 1999, pp. 3723-3734
Authors:
Barancok, D
Kluvanek, A
Thurzo, I
Vajda, J
Citation: D. Barancok et al., How to distinguish between discrete and distributed charge relaxations in charge transient spectroscopy, PHYS ST S-A, 172(2), 1999, pp. 519-528
Authors:
Thurzo, I
Nadazdy, V
Teramura, S
Durny, R
Kumeda, M
Shimizu, T
Citation: I. Thurzo et al., Small-signal deep level transient spectroscopy on hydrogenated amorphous silicon based metal/insulator/semiconductor structures, J APPL PHYS, 84(12), 1998, pp. 6906-6910
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