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Results:
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Results: 13
Authors:
Lau, GS
Tok, ES
Wee, ATS
Liu, R
Lim, SL
Citation: Gs. Lau et al., The investigation of surface topography development in Si(001) and Si(111)during SIMS depth profiling, SURF REV L, 8(5), 2001, pp. 453-457
Authors:
Tok, ES
Zhang, J
Kamiya, I
Xie, MH
Neave, JH
Joyce, BA
Citation: Es. Tok et al., Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries, SURF REV L, 8(5), 2001, pp. 509-511
Authors:
Hartell, AD
Tok, ES
Zhang, J
Citation: Ad. Hartell et al., The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001), J CRYST GR, 227, 2001, pp. 729-734
Authors:
Tok, ES
Kang, HC
Citation: Es. Tok et Hc. Kang, Reaction path for hydrogen adsorption and desorption on Si(100)-(2X1), J CHEM PHYS, 115(14), 2001, pp. 6550-6556
Authors:
Tok, ES
Hartell, AD
Zhang, J
Citation: Es. Tok et al., Kinetics of Si growth from hydride precursors on As-passivated Si(001) surface, APPL PHYS L, 78(7), 2001, pp. 919-921
Authors:
Yang, C
Kang, HC
Tok, ES
Citation: C. Yang et al., Adsorption and coadsorption of hydrogen and fluorine on the Si(100)-(2 x 1) surface, SURF SCI, 465(1-2), 2000, pp. 9-18
Authors:
Tok, ES
Woods, NJ
Price, RW
Taylor, AG
Zhang, J
Citation: Es. Tok et al., Optical second harmonic generation studies of epitaxial growth of Si and SiGe, J CRYST GR, 209(2-3), 2000, pp. 297-301
Authors:
Price, RW
Tok, ES
Zhang, J
Citation: Rw. Price et al., Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface, J CRYST GR, 209(2-3), 2000, pp. 306-310
Authors:
Tok, ES
Woods, NJ
Zhang, J
Citation: Es. Tok et al., RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence, J CRYST GR, 209(2-3), 2000, pp. 321-326
Authors:
Tok, ES
Price, RW
Taylor, AG
Zhang, J
Citation: Es. Tok et al., Oscillatory optical second-harmonic generation from Si(001) surface duringthin-film epitaxy, APPL PHYS L, 76(7), 2000, pp. 933-935
Authors:
Price, RW
Tok, ES
Zhang, J
Citation: Rw. Price et al., Probing the disilane adsorption kinetics: An alternative approach, PHYS REV B, 59(8), 1999, pp. R5292-R5295
Authors:
Steans, PH
Neave, JH
Zhang, J
Tok, ES
Bell, GR
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., Re-entrant behaviour in GaAs(111)A homoepitaxy, J CRYST GR, 202, 1999, pp. 198-201
Authors:
Garreau, Y
Aid, K
Sauvage-Simkin, M
Pinchaux, R
McConville, CF
Jones, TS
Sudijono, JL
Tok, ES
Citation: Y. Garreau et al., Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study, PHYS REV B, 58(24), 1998, pp. 16177-16185
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1-13
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