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Results:
1-11
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Results: 11
Authors:
Trager-Cowan, C
Manson-Smith, SK
Cowan, DA
Sweeney, F
McColl, D
Mohammed, A
Timm, R
Middleton, PG
O'Donnell, KP
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., Characterisation of nitride thin films by electron backscattered diffraction, MAT SCI E B, 82(1-3), 2001, pp. 19-21
Authors:
O'Donnell, KP
Martin, RW
Trager-Cowan, C
White, ME
Esona, K
Deatcher, C
Middleton, PG
Jacobs, K
Van der Stricht, W
Merlet, C
Gil, B
Vantomme, A
Mosselmans, JFW
Citation: Kp. O'Donnell et al., The dependence of the optical energies on InGaN composition, MAT SCI E B, 82(1-3), 2001, pp. 194-196
Authors:
Pereira, S
Correia, MR
Pereira, E
O'Donnell, KP
Trager-Cowan, C
Sweeney, F
Alves, E
Sequeira, AD
Franco, N
Watson, IM
Citation: S. Pereira et al., Depth resolved studies of indium content and strain in InGaN layers, PHYS ST S-B, 228(1), 2001, pp. 59-64
Authors:
Pereira, S
Correia, MR
Pereira, E
O'Donnell, KP
Trager-Cowan, C
Sweeney, F
Alves, E
Citation: S. Pereira et al., Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study - art. no. 205311, PHYS REV B, 6420(20), 2001, pp. 5311
Authors:
Martin, RW
Edwards, PR
Pecharroman-Gallego, R
Trager-Cowan, C
Kim, T
Kim, HS
Kim, KS
Watson, IM
Dawson, MD
Krauss, TF
Marsh, JH
De la Rue, RM
Citation: Rw. Martin et al., Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities, PHYS ST S-A, 183(1), 2001, pp. 145-149
Authors:
Trager-Cowan, C
McColl, D
Sweeney, F
Grimson, STF
Treguer, JF
Mohammed, A
Middleton, PG
Manson-Smith, SK
O'Donnell, KP
Van der Stricht, W
Moerman, I
Demeester, P
Wu, MF
Vantomme, A
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Authors:
Middleton, PG
O'Donnell, KP
Trager-Cowan, C
Cole, D
Cazzanelli, M
Lunney, J
Citation: Pg. Middleton et al., The emission spectrum of pulsed laser deposited GaN and its powder precursor, MAT SCI E B, 59(1-3), 1999, pp. 133-136
Authors:
Cazzanelli, M
Vinegoni, C
Cole, D
Lunney, JG
Middleton, PG
Trager-Cowan, C
O'Donnell, KP
Pavesi, L
Citation: M. Cazzanelli et al., Luminescent properties of GaN thin films prepared by pulsed laser deposition, MAT SCI E B, 59(1-3), 1999, pp. 137-140
Authors:
Trager-Cowan, C
McArthur, S
Middleton, PG
O'Donnell, KP
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., GaN epilayers on misoriented substrates, MAT SCI E B, 59(1-3), 1999, pp. 235-238
Authors:
Bayliss, SC
Demeester, P
Fletcher, I
Martin, RW
Middleton, PG
Moerman, I
O'Donnell, KP
Sapelkin, A
Trager-Cowan, C
Van der Stricht, W
Young, C
Citation: Sc. Bayliss et al., The optical and structural properties of InGaN epilayers with very high indium content, MAT SCI E B, 59(1-3), 1999, pp. 292-297
Authors:
Trager-Cowan, C
Osborne, I
Barisonzi, M
Manson-Smith, SK
O'Donnell, KP
Jacobs, K
Moerman, I
Demeester, P
Citation: C. Trager-cowan et al., Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer, PHYS ST S-B, 216(1), 1999, pp. 347-350
Risultati:
1-11
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