Authors:
Voyles, PM
Gerbi, JE
Treacy, MMJ
Gibson, JM
Abelson, JR
Citation: Pm. Voyles et al., Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature, PHYS REV L, 86(24), 2001, pp. 5514-5517
Authors:
Voyles, PM
Zotov, N
Nakhmanson, SM
Drabold, DA
Gibson, JM
Treacy, MMJ
Keblinski, P
Citation: Pm. Voyles et al., Structure and physical properties of paracrystalline atomistic models of amorphous silicon, J APPL PHYS, 90(9), 2001, pp. 4437-4451
Citation: Mmj. Treacy et al., Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models, J NON-CRYST, 266, 2000, pp. 150-155