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Results:
1-7
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Results: 7
Authors:
Koh, M
Mizubayashi, W
Iwamoto, K
Murakami, H
Ono, T
Tsuno, M
Mihara, T
Shibahara, K
Miyazaki, S
Hirose, M
Citation: M. Koh et al., Limit of gate oxide thickness scaling in MOSFETs due to apparent thresholdvoltage fluctuation induced by tunnel leakage current, IEEE DEVICE, 48(2), 2001, pp. 259-264
Authors:
Tominaga, K
Higuchi, K
Tsuno, M
Watanabe, T
Fujiwara, Y
Kim, S
Arakawa, T
Iwao, H
Kuroki, T
Citation: K. Tominaga et al., Induction of signal transduction pathways in rat gastric epithelial cells stimulated with interleukin-1 beta, ALIM PHARM, 14, 2000, pp. 101-108
Authors:
Tominaga, K
Arakawa, T
Tsuno, M
Kim, S
Iwao, H
Kuroki, T
Citation: K. Tominaga et al., Increased mitogen-activated protein kinase activities stimulated with interleukin-1-beta and mechanism(s) of the kinase signaling pathways in rat gastric epithelial cells, DIGESTION, 61(1), 2000, pp. 30-38
Authors:
Tsuno, M
Suga, M
Tanaka, M
Shibahara, K
Miura-Mattausch, M
Hirose, M
Citation: M. Tsuno et al., Physically-based threshold voltage determination for MOSFET's of all gate lengths, IEEE DEVICE, 46(7), 1999, pp. 1429-1434
Authors:
Tsuno, M
Tanaka, M
Koh, M
Iwamoto, K
Murakami, H
Shibahara, K
Mattausch, MM
Citation: M. Tsuno et al., Suppression of reverse-short-channel effect in sub -0.1 mu m n-MOSFETs with Sb S/D implantation, ELECTR LETT, 35(6), 1999, pp. 508-509
Authors:
Tsuno, M
Yokoyama, S
Shibahara, K
Citation: M. Tsuno et al., New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance, JPN J A P 1, 37(11), 1998, pp. 5902-5905
Authors:
Tsuno, M
Yokoyama, S
Shibahara, K
Citation: M. Tsuno et al., A study of electrical characteristics improvements in sub-0.1 mu m gate length MOSFETs by low temperature operation, IEICE TR EL, E81C(12), 1998, pp. 1913-1917
Risultati:
1-7
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