Authors: Hoshi, S Izumi, T Ohshima, T Tsunotani, M Kimura, T

Citation: S. Hoshi et al., The recovery process of RIE-damage in InGaAs/AlGaAs PHEMT using recombination enhanced defect reaction, IEICE TR EL, E84C(10), 2001, pp. 1350-1355

Authors: Ikeda, H Ohshima, T Tsunotani, M Ichioka, T Kimura, T

Citation: H. Ikeda et al., An auto-gain control transimpedance amplifier with low noise and wide input dynamic range for 10-Gb/s optical communication systems, IEEE J SOLI, 36(9), 2001, pp. 1303-1308

Authors: Ohshima, T Yoshida, M Shigemasa, R Tsunotani, M Kimura, T

Citation: T. Ohshima et al., Gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors formed by wet recess etching, JPN J A P 1, 39(9A), 2000, pp. 5052-5056

Authors: Ohshima, T Moriguchi, H Shigemasa, R Goto, S Tsunotani, M Kimura, T

Citation: T. Ohshima et al., Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition, JPN J A P 1, 38(2B), 1999, pp. 1161-1163

Authors: Ohshima, T Shigemasa, R Sato, M Tsunotani, M Kimura, T

Citation: T. Ohshima et al., Improvement of 0.1 mu m-gate InGaAs/AlGaAs HEMT performance by suppressionof electro-chemical etching in deionized water, SOL ST ELEC, 43(8), 1999, pp. 1519-1526