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Results: 1-8 |
Results: 8
Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Yankov, RA Rebohle, L Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Rebohle, L Skorupa, W Yankov, RA Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions
Authors: Kachurin, GA Rebohle, L Tyschenko, IE Volodin, VA Voelskow, M Skorupa, W Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26
Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Rebohle, L Misiuk, A Yankov, RA Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions
Authors: Tyschenko, IE Volodin, VA Rebohle, L Voelskov, M Skorupa, V
Citation: Ie. Tyschenko et al., Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions, SEMICONDUCT, 33(5), 1999, pp. 523-528
Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions
Authors: Kachurin, GA Leier, AF Zhuravlev, KS Tyschenko, IE Gutakovskii, AK Volodin, VA Skorupa, W Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films
Authors: Tyschenko, IE Rebohle, L Yankov, RA Skorupa, W Misiuk, A Kachurin, GA
Citation: Ie. Tyschenko et al., The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films, J LUMINESC, 80(1-4), 1998, pp. 229-233
Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
Authors: Rebohle, L von Borany, J Skorupa, W Tyschenko, IE Frob, H
Citation: L. Rebohle et al., Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers, J LUMINESC, 80(1-4), 1998, pp. 275-279
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