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Results: 3
HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTIC OF GAAS-BASED, THIN-FILM STRUCTURES
Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT EPPEL VI
Citation: Nb. Gorev et al., HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTIC OF GAAS-BASED, THIN-FILM STRUCTURES, Semiconductors, 31(1), 1997, pp. 78-80
RELATION BETWEEN PARAMETERS OF N-GAAS THI N-FILM STRUCTURES AND LOW-FREQUENCY BARRIER CAPACITANCE
Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT
Citation: Nb. Gorev et al., RELATION BETWEEN PARAMETERS OF N-GAAS THI N-FILM STRUCTURES AND LOW-FREQUENCY BARRIER CAPACITANCE, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 333-336
DEEP LEVELS AND REDUCTION IN THE CONDUCTANCE OF A DIRECT SELECTIVELY DOPED HETEROSTRUCTURE ON APPLICATION OF A TRIGGERING VOLTAGE PULSE TO THE GATE
Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT EPPEL VI
Citation: Nb. Gorev et al., DEEP LEVELS AND REDUCTION IN THE CONDUCTANCE OF A DIRECT SELECTIVELY DOPED HETEROSTRUCTURE ON APPLICATION OF A TRIGGERING VOLTAGE PULSE TO THE GATE, Semiconductors, 27(6), 1993, pp. 540-542
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