Authors: ULMER L TORRESGARCIA G LUFTMANN H MATTAY J

Citation: L. Ulmer et al., MONO-FUNCTIONALIZATION AND BISFUNCTIONALIZATION OF FULLERENES WITH N-CONTAINING REACTANTS, Journal of information recording, 24(3-4), 1998, pp. 243-247

Authors: MARCADAL C RICHARD E TORRES J PALLEAU J ULMER L PERROUD L PIAGUET J ROLLAND G

Citation: C. Marcadal et al., OMCVD TIN DIFFUSION BARRIER FOR COPPER CONTACT AND VIA INTERCONNECTS STRUCTURES/, Microelectronic engineering, 37-8(1-4), 1997, pp. 197-203

Authors: ULMER L PITARD F PONCET D DEMOLLIENS O

Citation: L. Ulmer et al., FORMATION OF AL3TI DURING PHYSICAL VAPOR-DEPOSITION OF TITANIUM ON ALUMINUM, Microelectronic engineering, 37-8(1-4), 1997, pp. 381-387

Authors: ULMER L GEORGES L VELER JC MORAND Y BAKLI M FERRIER V LERME M PERROUD L MOREL T

Citation: L. Ulmer et al., EFFECT OF TUNGSTEN CHEMICAL-VAPOR-DEPOSITION NUCLEATION STEP ON VIA PERFORMANCE, Microelectronic engineering, 33(1-4), 1997, pp. 121-127

Authors: ARNAUD L MARIOLLE D MOREAU P ULMER L

Citation: L. Arnaud et al., INFLUENCE OF ARC CAPPING LAYER ON STRESS-INDUCED VOIDING IN NARROW ALCU METALLIZATIONS, Microelectronics and reliability, 37(10-11), 1997, pp. 1487-1490

Authors: MARIETTE H MAGNEA N BLEUSE J JOUNEAU PH MONTERRAT E ULMER L TARDOT A PAUTRAT JL

Citation: H. Mariette et al., OPTICAL-PROPERTIES OF CDXHG1-XTE (0.3-LESS-THAN-X-LESS-THAN-1) STRAINED-LAYER HETEROSTRUCTURES, Physica. B, Condensed matter, 191(1-2), 1993, pp. 190-202