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Results: 1-25/115
Authors:
SARAVANAN S
JEGANATHAN K
AROKIARAJ J
BASKAR K
RAMASAMY P
JIMBO T
SOGA T
UMENO M
Citation: S. Saravanan et al., OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 37(5A), 1998, pp. 2598-2601
Authors:
ZHAO GY
EBISU H
SOGA T
EGAWA T
JIMBO T
UMENO M
Citation: Gy. Zhao et al., ELECTRICAL-TRANSPORT PROPERTIES OF GASB GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 37(4A), 1998, pp. 1704-1708
Authors:
EGAWA T
OGAWA A
JIMBO T
UMENO M
Citation: T. Egawa et al., ALGAAS GAAS LASER-DIODES WITH GAAS ISLANDS ACTIVE REGIONS ON SI GROWNBY DROPLET EPITAXY/, JPN J A P 1, 37(3B), 1998, pp. 1552-1555
Authors:
SARAVANAN S
AROKIARAJ J
JIMBO T
SOGA T
UMENO M
Citation: S. Saravanan et al., INVESTIGATIONS OF A RAPID THERMAL ANNEALED AL0.15GA0.85AS SI STRUCTURE/, JPN J A P 2, 37(5A), 1998, pp. 496-498
Authors:
ISHIKAWA H
NAKAMURA K
EGAWA T
JIMBO T
UMENO M
Citation: H. Ishikawa et al., PD GAN SCHOTTKY DIODE WITH A BARRIER HEIGHT OF 1.5 EV AND A REASONABLY EFFECTIVE RICHARDSON COEFFICIENT/, JPN J A P 2, 37(1AB), 1998, pp. 7-9
Authors:
WANG G
ZHAO GY
SOGA T
JIMBO T
UMENO M
Citation: G. Wang et al., EFFECTS OF H-PLASMA PASSIVATION ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF GAAS-ON-SI, JPN J A P 2, 37(11A), 1998, pp. 1280-1282
Authors:
LICHT S
KHASELEV O
RAMAKRISHNAN PA
SOGA T
UMENO M
Citation: S. Licht et al., MULTIPLE-BANDGAP PHOTOELECTROCHEMISTRY - BIPOLAR SEMICONDUCTOR OHMIC REGENERATIVE ELECTROCHEMISTRY, JOURNAL OF PHYSICAL CHEMISTRY B, 102(14), 1998, pp. 2536-2545
Authors:
LICHT S
KHASELEV O
RAMAKRISHNAN PA
SOGA T
UMENO M
Citation: S. Licht et al., MULTIPLE-BANDGAP PHOTOELECTROCHEMISTRY - INVERTED SEMICONDUCTOR OHMICREGENERATIVE ELECTROCHEMISTRY, JOURNAL OF PHYSICAL CHEMISTRY B, 102(14), 1998, pp. 2546-2554
Authors:
UMENO M
SOGA T
BASKAR K
JIMBO T
Citation: M. Umeno et al., HETEROEPITAXIAL TECHNOLOGIES ON SI FOR HIGH-EFFICIENCY SOLAR-CELLS, Solar energy materials and solar cells, 50(1-4), 1998, pp. 203-212
Authors:
KINOSHITA H
TAGAWA M
UMENO M
OHMAE N
Citation: H. Kinoshita et al., SURFACE-REACTION OF A LOW FLUX ATOMIC OXYGEN BEAM WITH A SPIN-COATED POLYIMIDE FILM - TRANSLATIONAL ENERGY-DEPENDENCE ON THE REACTION EFFICIENCY, Transactions of the Japan Society for Aeronautical and Space Sciences, 41(132), 1998, pp. 94-99
Authors:
SHIOTA T
MORITA M
TAGAWA M
OHMAE N
UMENO M
Citation: T. Shiota et al., ORIGIN OF THE FIELD-STIMULATED EXOELECTRON EMISSION FROM TUNGSTEN TIPSURFACES, Ultramicroscopy, 73(1-4), 1998, pp. 217-221
Authors:
SHIMURA T
SENSUI H
UMENO M
Citation: T. Shimura et al., EFFECTS OF THE SUBSTRATE CRYSTALS UPON THE STRUCTURE OF THERMAL OXIDELAYERS ON SI, Crystal research and technology, 33(4), 1998, pp. 637-642
Authors:
TOCHIHARA H
KOMANO Y
ISHIDA M
NARUKAWA K
UMENO M
Citation: H. Tochihara et al., NUCLEAR DESIGN FOR MIXED MODERATOR PWR, Progress in nuclear energy (New series), 32(3-4), 1998, pp. 533-537
Authors:
KINOSHITA H
IKEDA J
TAGAWA M
UMENO M
OHMAE N
Citation: H. Kinoshita et al., A FAST ATOMIC OXYGEN BEAM FACILITY WITH IN-SITU TESTING ANALYSIS CAPABILITIES/, Review of scientific instruments, 69(6), 1998, pp. 2273-2277
Authors:
SARAVANAN S
JEGANATHAN K
BASKAR K
JIMBO T
SOGA T
UMENO M
Citation: S. Saravanan et al., CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY, Journal of crystal growth, 192(1-2), 1998, pp. 23-27
Authors:
ISHIKAWA H
YAMAMOTO K
EGAWA T
SOGA T
JIMBO T
UMENO M
Citation: H. Ishikawa et al., THERMAL-STABILITY OF GAN ON (111)SI SUBSTRATE, Journal of crystal growth, 190, 1998, pp. 178-182
Authors:
YAMAMOTO K
ISHIKAWA H
EGAWA T
JIMBO T
UMENO M
Citation: K. Yamamoto et al., EBIC OBSERVATION OF N-GAN GROWN ON SAPPHIRE SUBSTRATES BY MOCVD, Journal of crystal growth, 190, 1998, pp. 575-579
Authors:
YU G
ISHIKAWA H
EGAWA T
SOGA T
WATANABE J
JIMBO T
UMENO M
Citation: G. Yu et al., MECHANICAL-PROPERTIES OF THE GAN THIN-FILMS DEPOSITED ON SAPPHIRE SUBSTRATE, Journal of crystal growth, 190, 1998, pp. 701-705
Authors:
YU GL
KRISHNA KM
SHAO CL
UMENO M
SOGA T
WATANABE JJ
JIMBO T
Citation: Gl. Yu et al., CHARACTERIZATION OF EXCIMER-LASER ANNEALED POLYCRYSTALLINE SI1-XGEX ALLOY THIN-FILMS BY X-RAY-DIFFRACTION AND SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 83(1), 1998, pp. 174-180
Authors:
EGAWA T
ISHIKAWA H
JIMBO T
UMENO M
Citation: T. Egawa et al., SIDEGATING EFFECT OF GAN MESFETS GROWN ON SAPPHIRE SUBSTRATE, Electronics Letters, 34(6), 1998, pp. 598-600
Authors:
ARULKUMARAN S
EGAWA T
ISHIKAWA H
JIMBO T
UMENO M
Citation: S. Arulkumaran et al., INVESTIGATIONS OF SIO2 N-GAN AND SI3N4/N-GAN INSULATOR-SEMICONDUCTOR INTERFACES WITH LOW INTERFACE STATE DENSITY/, Applied physics letters, 73(6), 1998, pp. 809-811
Authors:
YU G
ISHIKAWA H
UMENO M
EGAWA T
WATANABE J
SOGA T
JIMBO T
Citation: G. Yu et al., THE INFRARED OPTICAL FUNCTIONS OF ALXGA1-XN DETERMINED BY REFLECTANCESPECTROSCOPY, Applied physics letters, 73(11), 1998, pp. 1472-1474
Authors:
ZHAO GY
ISHIKAWA H
YU G
EGAWA T
WATANABE J
SOGA T
JIMBO T
UMENO M
Citation: Gy. Zhao et al., THERMOOPTICAL NONLINEARITY OF GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 73(1), 1998, pp. 22-24
Authors:
YU G
ISHIKAWA H
UMENO M
EGAWA T
WATANABE J
JIMBO T
SOGA T
Citation: G. Yu et al., OPTICAL-PROPERTIES OF ALXGA1-XN GAN HETEROSTRUCTURES ON SAPPHIRE BY SPECTROSCOPIC ELLIPSOMETRY/, Applied physics letters, 72(18), 1998, pp. 2202-2204
Authors:
MOSADDEQURRAHMAN M
YU GL
KRISHNA KM
SOGA T
WATANABE JJ
JIMBO T
UMENO M
Citation: M. Mosaddequrrahman et al., DETERMINATION OF OPTICAL-CONSTANTS OF SOLGEL-DERIVED INHOMOGENEOUS TIO2 THIN-FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND TRANSMISSION SPECTROSCOPY, Applied optics, 37(4), 1998, pp. 691-697