AAAAAA

   
Results: 1-6 |
Results: 6

Authors: UNOLD T REEDY RC MAHAN AH
Citation: T. Unold et al., DEFECTS IN HOT-WIRE DEPOSITED AMORPHOUS-SILICON - RESULTS FROM ELECTRON-SPIN-RESONANCE, Journal of non-crystalline solids, 230, 1998, pp. 362-366

Authors: LIPS K UNOLD T XU Y CRANDALL RS
Citation: K. Lips et al., EMISSION LIMITED FILLING OF DEEP DEFECTS IN TRANSIENT CAPACITANCE EXPERIMENTS, Journal of non-crystalline solids, 200, 1996, pp. 525-529

Authors: BRANZ HM UNOLD T FEDDERS PA
Citation: Hm. Branz et al., STRUCTURAL MEMORY MODEL OF SLOW DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 535-539

Authors: UNOLD T HAUTALA J COHEN JD
Citation: T. Unold et al., EFFECT OF CARBON IMPURITIES ON THE DENSITY-OF-STATES AND THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 50(23), 1994, pp. 16985-16994

Authors: UNOLD T COHEN JD FORTMANN CM
Citation: T. Unold et al., ELECTRONIC MOBILITY GAP STRUCTURE AND DEEP DEFECTS IN AMORPHOUS SILICON-GERMANIUM ALLOYS, Applied physics letters, 64(13), 1994, pp. 1714-1716

Authors: UNOLD T COHEN JD
Citation: T. Unold et Jd. Cohen, ELECTRONIC MOBILITY GAP STRUCTURE AND THE NATURE OF DEEP DEFECTS IN AMORPHOUS-SILICON GERMANIUM ALLOYS GROWN BY PHOTO-CVD, Journal of non-crystalline solids, 166, 1993, pp. 23-26
Risultati: 1-6 |