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Results:
1-9
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Results: 9
Authors:
URSAKI VV
BURLAKOV II
TIGINYANU IM
RAPTIS YS
ANASTASSAKIS E
AKSENOV I
SATO K
Citation: Vv. Ursaki et al., PRESSURE-INDUCED PHASE-TRANSITIONS IN SPINEL AND WURTZITE PHASES OF ZNAL2S4 COMPOUND, JPN J A P 1, 37(1), 1998, pp. 135-140
Authors:
BURLAKOV II
RAPTIS Y
URSAKI VV
ANASTASSAKIS E
TIGINYANU IM
Citation: Ii. Burlakov et al., ORDER-DISORDER PHASE-TRANSITION IN CDAL2S4 UNDER HYDROSTATIC-PRESSURE, Solid state communications, 101(5), 1997, pp. 377-381
Authors:
TIGINYANU IM
KRAVETSKY IV
URSAKI VV
MAROWSKY G
HARTNAGEL HL
Citation: Im. Tiginyanu et al., CRYSTAL ORDER RESTORATION AND ZN-IMPURITY ACTIVATION IN INP BY AS-COIMPLANTATION AND ANNEALING(), Physica status solidi. a, Applied research, 162(2), 1997, pp. 9-10
Authors:
ANEDDA A
CASU MB
SERPI A
BURLAKOV II
TIGINYANU IM
URSAKI VV
Citation: A. Anedda et al., RECOMBINATION IN HGGAINS4 SINGLE-CRYSTALS, Journal of physics and chemistry of solids, 58(2), 1997, pp. 325-330
Authors:
TIGINYANU IM
URSAKI VV
KARAVANSKII VA
SOKOLOV VN
RAPTIS YS
ANASTASSAKIS E
Citation: Im. Tiginyanu et al., SURFACE-RELATED PHONON MODE IN POROUS GAP, Solid state communications, 97(8), 1996, pp. 675-678
Authors:
TIGINYANU IM
TERLETSKY AI
URSAKI VV
Citation: Im. Tiginyanu et al., IMPROVEMENT OF INP CRYSTALLINE PERFECTION BY HE-IMPLANTATION AND SUBSEQUENT ANNEALING(), Solid state communications, 96(10), 1995, pp. 789-792
Authors:
PYSHNAYA NB
TIGINYANU IM
URSAKI VV
Citation: Nb. Pyshnaya et al., REDUCTION OF THE DEGREE OF CONDUCTIVITY COMPENSATION IN EPITAXIAL N-INP FILMS BY FAST-ELECTRON BOMBARDMENT, Semiconductors, 28(1), 1994, pp. 1-3
Authors:
ANEDDA A
SERPI A
MOLDOVYAN NA
TIGINYANU IM
URSAKI VV
Citation: A. Anedda et al., LUMINESCENT AND PHOTOCONDUCTIVE PROPERTIES OF AGGA2.5IN2.5S8 AND CUGA2.5IN2.5S8 NEW SEMICONDUCTORS, JPN J A P 1, 32, 1993, pp. 466-468
Authors:
FOMIN VM
TIGINYANU IM
URSAKI VV
Citation: Vm. Fomin et al., NONLINEAR RAMAN-SCATTERING IN II-III2-VI4 COMPOUNDS, JPN J A P 1, 32, 1993, pp. 490-493
Risultati:
1-9
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