AAAAAA

   
Results: 1-16 |
Results: 16
MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY
Authors: FERRER JC PEIRO F CORNET A MORANTE JR UTZMEIER T ARMELLES G BRIONES F
Citation: Jc. Ferrer et al., MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 51-57
IN-SITU OPTICAL SPECTROSCOPY OF GA DIMERS ON GAP, GAAS, AND GASB BY SURFACE CHEMICAL MODULATION
Authors: POSTIGO PA ARMELLES G UTZMEIER T BRIONES F
Citation: Pa. Postigo et al., IN-SITU OPTICAL SPECTROSCOPY OF GA DIMERS ON GAP, GAAS, AND GASB BY SURFACE CHEMICAL MODULATION, Physical review. B, Condensed matter, 57(3), 1998, pp. 1359-1361
IN-SITU OBSERVATION OF SURFACE OPTICAL ANISOTROPY ON INP, INAS, AND INSB BY CHEMICAL MODULATION SPECTROSCOPY
Authors: POSTIGO PA ARMELLES G UTZMEIER T BRIONES F
Citation: Pa. Postigo et al., IN-SITU OBSERVATION OF SURFACE OPTICAL ANISOTROPY ON INP, INAS, AND INSB BY CHEMICAL MODULATION SPECTROSCOPY, Physical review. B, Condensed matter, 57(3), 1998, pp. 1362-1365
STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES
Authors: PRIETO JA ARMELLES G UTZMEIER T BRIONES F FERRER JC PEIRO F CORNET A MORANTE JR
Citation: Ja. Prieto et al., STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, Physical review letters, 80(5), 1998, pp. 1094-1097
MICROSTRUCTURE OF PYRAMIDAL DEFECTS IN INSB LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES
Authors: FERRER JC PEIRO F CORNET A MORANTE JR UTZMEIER T BRIONES F
Citation: Jc. Ferrer et al., MICROSTRUCTURE OF PYRAMIDAL DEFECTS IN INSB LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES, Journal de physique. III, 7(12), 1997, pp. 2317-2324
OPTICAL-PROPERTIES OF INSB LAYERS CONFINED BY INP
Authors: UTZMEIER T ARMELLES G POSTIGO PA BRIONES F
Citation: T. Utzmeier et al., OPTICAL-PROPERTIES OF INSB LAYERS CONFINED BY INP, Physical review. B, Condensed matter, 56(7), 1997, pp. 3621-3623
SUBMONOLAYER SENSITIVITY OF INSB ON INP DETERMINED BY FRICTION-FORCE MICROSCOPY
Authors: TAMAYO J GARCIA R UTZMEIER T BRIONES F
Citation: J. Tamayo et al., SUBMONOLAYER SENSITIVITY OF INSB ON INP DETERMINED BY FRICTION-FORCE MICROSCOPY, Physical review. B, Condensed matter, 55(20), 1997, pp. 13436-13439
THE EFFECT OF REDUCING DIMENSIONALITY ON THE EXCITONIC RECOMBINATION IN INAS INP HETEROSTRUCTURES/
Authors: MARTINEZCRIADO G MARTINEZPASTOR J CANTARERO A UTZMEIER T BRIONES F
Citation: G. Martinezcriado et al., THE EFFECT OF REDUCING DIMENSIONALITY ON THE EXCITONIC RECOMBINATION IN INAS INP HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 155-158
GROWTH AND CHARACTERIZATION OF SELF-ORGANIZED INSB QUANTUM DOTS AND QUANTUM DASHES
Authors: UTZMEIER T TAMAYO J POSTIGO PA GARCIA R BRIONES F
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF SELF-ORGANIZED INSB QUANTUM DOTS AND QUANTUM DASHES, Journal of crystal growth, 175, 1997, pp. 725-729
A NEW IN-SITU III-V SURFACE CHARACTERIZATION TECHNIQUE - CHEMICAL MODULATION SPECTROSCOPY
Authors: POSTIGO PA UTZMEIER T ARMELLES G BRIONES F
Citation: Pa. Postigo et al., A NEW IN-SITU III-V SURFACE CHARACTERIZATION TECHNIQUE - CHEMICAL MODULATION SPECTROSCOPY, Journal of crystal growth, 175, 1997, pp. 298-303
RAMAN-SCATTERING OF INSB QUANTUM DOTS GROWN ON INP SUBSTRATES
Authors: ARMELLES G UTZMEIER T POSTIGO PA BRIONES F FERRER JC PEIRO P CORNET A
Citation: G. Armelles et al., RAMAN-SCATTERING OF INSB QUANTUM DOTS GROWN ON INP SUBSTRATES, Journal of applied physics, 81(9), 1997, pp. 6339-6342
GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES
Authors: UTZMEIER T ARMELLES G POSTIGO PA BRIONES F CASTRILLO P SANZHERVAS A AGUILAR M ABRIL EJ
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES, Applied physics letters, 70(22), 1997, pp. 3017-3019
GROWTH AND CHARACTERIZATION OF INSB INP SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY ALMBE/
Authors: UTZMEIER T ARMELLES G POSTIGO PA BRIONES F
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF INSB INP SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY ALMBE/, Solid-state electronics, 40(1-8), 1996, pp. 621-626
RESONANT RAMAN-SCATTERING STUDY OF INSB ETCHED BY REACTIVE ION-BEAM ETCHING
Authors: SENDRA JR ARMELLES G UTZMEIER T ANGUITA J BRIONES F
Citation: Jr. Sendra et al., RESONANT RAMAN-SCATTERING STUDY OF INSB ETCHED BY REACTIVE ION-BEAM ETCHING, Journal of applied physics, 79(11), 1996, pp. 8853-8855
TRANSITION FROM SELF-ORGANIZED INSB QUANTUM-DOTS TO QUANTUM DASHES
Authors: UTZMEIER T POSTIGO PA TAMAYO J GARCIA R BRIONES F
Citation: T. Utzmeier et al., TRANSITION FROM SELF-ORGANIZED INSB QUANTUM-DOTS TO QUANTUM DASHES, Applied physics letters, 69(18), 1996, pp. 2674-2676
LATERAL POTENTIAL MODULATION IN INAS ALSB QUANTUM-WELLS BY WET ETCHING/
Authors: UTZMEIER T SCHLOSSER T ENSSLIN K KOTTHAUS JP BOLOGNESI CR NGUYEN C KROEMER H
Citation: T. Utzmeier et al., LATERAL POTENTIAL MODULATION IN INAS ALSB QUANTUM-WELLS BY WET ETCHING/, Solid-state electronics, 37(4-6), 1994, pp. 575-578
Risultati: 1-16 |