Authors: Ubukata, A Dong, J Suzuki, K Matsumoto, K

Citation: A. Ubukata et al., InGaAs/InGaAsP quantum well laser at 2.04 mu m for diode spectroscopy of carbon dioxide isotope, JPN J A P 1, 40(11), 2001, pp. 6406-6410

Authors: Ubukata, A Dong, J Matsumoto, K Ishihara, Y

Citation: A. Ubukata et al., Growth of Ga0.46In0.54NyAs1-y single quantum wells on InP(100) substrate by metalorganic chemical vapor deposition, JPN J A P 1, 39(10), 2000, pp. 5962-5965

Authors: Ubukata, A Dong, J Matsumoto, K

Citation: A. Ubukata et al., Improvement of characteristic temperature in In0.81Ga0.19As/InGaAsP multiple quantum well laser operating at 1.74 mu m for laser monitor, JPN J A P 1, 38(2B), 1999, pp. 1243-1245