Authors: Harmand, JC Ungaro, G Ramos, J Rao, EVK Saint-Girons, G Teissier, R Le Roux, G Largeau, L Patriarche, G

Citation: Jc. Harmand et al., Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission, J CRYST GR, 227, 2001, pp. 553-557

Authors: Teissier, R Sicault, D Harmand, JC Ungaro, G Le Roux, G Largeau, L

Citation: R. Teissier et al., Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs, J APPL PHYS, 89(10), 2001, pp. 5473-5477

Authors: Harmand, JC Ungaro, G Largeau, L Le Roux, G

Citation: Jc. Harmand et al., Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN, APPL PHYS L, 77(16), 2000, pp. 2482-2484

Authors: Harmand, JC Ungaro, G Sagnes, I Debray, JP Sermage, B Rivera, T Meriadec, C Oudar, JL Raj, R Olivier-martin, F Kazmierski, C Madani, R

Citation: Jc. Harmand et al., Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror, J CRYST GR, 202, 1999, pp. 837-840

Authors: Ungaro, G Le Roux, G Teissier, R Harmand, JC

Citation: G. Ungaro et al., GaAsSbN: a new low-bandgap material for GaAs substrates, ELECTR LETT, 35(15), 1999, pp. 1246-1248