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Results:
1-7
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Results: 7
Authors:
NATAF G
BEAUMONT B
BOUILLE A
HAFFOUZ S
VAILLE M
GIBART P
Citation: G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78
Authors:
BEAUMONT B
GIBART P
VAILLE M
HAFFOUZ S
NATAF G
BOUILLE A
Citation: B. Beaumont et al., LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/, Journal of crystal growth, 190, 1998, pp. 97-102
INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE
Authors:
VENNEGUES P
BEAUMONT B
HAFFOUZ S
VAILLE M
GIBART P
Citation: P. Vennegues et al., INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE, Journal of crystal growth, 187(2), 1998, pp. 167-177
Authors:
TEISSEYRE H
LESZCZYNSKI M
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
PAKULA K
ROBERT JL
BEAUMONT B
GIBART P
VAILLE M
FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
Authors:
VENNEGUES P
BEAUMONT B
VAILLE M
GIBART P
Citation: P. Vennegues et al., MICROSTRUCTURE OF GAN EPITAXIAL-FILMS AT DIFFERENT STAGES OF THE GROWTH-PROCESS ON SAPPHIRE(0001), Journal of crystal growth, 173(3-4), 1997, pp. 249-259
Authors:
BEAUMONT B
VAILLE M
BOUFADEN T
ELJANI B
GIBART P
Citation: B. Beaumont et al., HIGH-QUALITY GAN GROWN BY MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 316-320
Authors:
VENNEGUES P
BEAUMONT B
VAILLE M
GIBART P
Citation: P. Vennegues et al., STUDY OF OPEN-CORE DISLOCATIONS IN GAN FILMS ON (0001)-SAPPHIRE, Applied physics letters, 70(18), 1997, pp. 2434-2436
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