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Results: 1-7 |
Results: 7

Authors: SIGOGNE D OUGAZZADEN A MEICHENIN D MERSALI B CARENCO A SIMON JC VALIENTE I VASSALLO C BILLES L
Citation: D. Sigogne et al., 1.55-MU-M POLARIZATION-INSENSITIVE INGAASP STRAINED MQW OPTICAL AMPLIFIER INTEGRATED WITH SHORT SPOT-SIZE CONVERTERS, Electronics Letters, 32(15), 1996, pp. 1403-1405

Authors: LAMBERT B TOUDIC Y ROUILLARD Y GAUNEAU M BAUDET M ALARD F VALIENTE I SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES/, Applied physics letters, 66(4), 1995, pp. 442-444

Authors: SIMON JC DOUSSIERE P LAMOULER P VALIENTE I RIOU F
Citation: Jc. Simon et al., TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIER WITH REDUCED NONLINEARDISTORTIONS, Electronics Letters, 30(1), 1994, pp. 49-50

Authors: LAMBERT B TOUDIC Y ROUILLARD Y BAUDET M GUENAIS B DEVEAUD B VALIENTE I SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55 MU-M (AL)GASB ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 64(6), 1994, pp. 690-691

Authors: LAMBERT B TOUDIC Y ROUILLARD Y BAUDET M GUENAIS B DEVEAUD B VALIENTE I SIMON JC
Citation: B. Lambert et al., OPTICAL-PROPERTIES OF GASB-ALSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 185-188

Authors: VALIENTE I SIMON JC LELIGNE M
Citation: I. Valiente et al., THEORETICAL-ANALYSIS OF SEMICONDUCTOR OPTICAL AMPLIFIER WAVELENGTH SHIFTER, Electronics Letters, 29(5), 1993, pp. 502-503

Authors: CHAWKI MJ VALIENTE I AUFFRET R THOLEY V
Citation: Mj. Chawki et al., ALL-FIBER, 1.5-MU-M WIDELY TUNABLE SINGLE-FREQUENCY AND NARROW-LINEWIDTH SEMICONDUCTOR RING LASER WITH FIBER FABRY-PEROT FILTER, Electronics Letters, 29(23), 1993, pp. 2034-2035
Risultati: 1-7 |