Authors:
SIGOGNE D
OUGAZZADEN A
MEICHENIN D
MERSALI B
CARENCO A
SIMON JC
VALIENTE I
VASSALLO C
BILLES L
Citation: D. Sigogne et al., 1.55-MU-M POLARIZATION-INSENSITIVE INGAASP STRAINED MQW OPTICAL AMPLIFIER INTEGRATED WITH SHORT SPOT-SIZE CONVERTERS, Electronics Letters, 32(15), 1996, pp. 1403-1405
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
GAUNEAU M
BAUDET M
ALARD F
VALIENTE I
SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES/, Applied physics letters, 66(4), 1995, pp. 442-444
Authors:
SIMON JC
DOUSSIERE P
LAMOULER P
VALIENTE I
RIOU F
Citation: Jc. Simon et al., TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIER WITH REDUCED NONLINEARDISTORTIONS, Electronics Letters, 30(1), 1994, pp. 49-50
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
BAUDET M
GUENAIS B
DEVEAUD B
VALIENTE I
SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55 MU-M (AL)GASB ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 64(6), 1994, pp. 690-691
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
BAUDET M
GUENAIS B
DEVEAUD B
VALIENTE I
SIMON JC
Citation: B. Lambert et al., OPTICAL-PROPERTIES OF GASB-ALSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 185-188
Citation: I. Valiente et al., THEORETICAL-ANALYSIS OF SEMICONDUCTOR OPTICAL AMPLIFIER WAVELENGTH SHIFTER, Electronics Letters, 29(5), 1993, pp. 502-503
Citation: Mj. Chawki et al., ALL-FIBER, 1.5-MU-M WIDELY TUNABLE SINGLE-FREQUENCY AND NARROW-LINEWIDTH SEMICONDUCTOR RING LASER WITH FIBER FABRY-PEROT FILTER, Electronics Letters, 29(23), 1993, pp. 2034-2035