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HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/
Authors: REVENANTBRIZARD C REGNARD JR SOLMI S ARMIGLIATO A VALMORRI S CELLINI C ROMANATO F
Citation: C. Revenantbrizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/, Journal of applied physics, 79(12), 1996, pp. 9037-9042
CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON
Authors: SOLMI S VALMORRI S CANTERI R
Citation: S. Solmi et al., CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON, Journal of applied physics, 77(6), 1995, pp. 2400-2406
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