Authors:
VANDENBOSSCHE E
DEKEUKELEIRE C
DEWOLF M
VANHOVE H
WITTERS J
Citation: E. Vandenbossche et al., MODELING AND SIMULATION OF HOT-CARRIERS DEGRADATION OF HIGH-VOLTAGE FLOATING LATERAL NDMOS TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1097-1101
Citation: B. Baccus et E. Vandenbossche, A CONTINUOUS AND GENERAL-MODEL FOR BORON-DIFFUSION DURING POSTIMPLANTANNEALING INCLUDING DAMAGED AND AMORPHIZING CONDITIONS, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 59-66
Citation: B. Baccus et E. Vandenbossche, MODELING HIGH-CONCENTRATION BORON-DIFFUSION WITH DYNAMIC CLUSTERING -INFLUENCE OF THE INITIAL CONDITIONS, Microelectronics, 26(2-3), 1995, pp. 235-242
Citation: B. Baccus et al., MODELING HIGH-CONCENTRATION BORON-DIFFUSION UNDER AMORPHIZATION CONDITIONS, Journal of applied physics, 77(11), 1995, pp. 5630-5641
Citation: E. Vandenbossche et B. Baccus, MODELING INACTIVE BORON DURING PREDEPOSITION PROCESSES, Journal of applied physics, 73(11), 1993, pp. 7322-7330