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BUDA M
VANDEROER TG
KAUFMANN LMF
IORDACHE G
CENGHER D
DIACONESCU D
PETRESCUPRAHOVA IB
HAVERKORT JEM
VANDERVLEUTEN W
WOLTER JH
Citation: M. Buda et al., ANALYSIS OF 6-NM ALGAAS SQW LOW-CONFINEMENT LASER STRUCTURES FOR VERYHIGH-POWER OPERATION, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 173-179
Authors:
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SILOV AY
HAVERKORT JEM
VANDERVLEUTEN W
WOLTER JH
Citation: J. Brubach et al., COUPLED ULTRATHIN INAS LAYERS IN GAAS AS A TOOL FOR THE DETERMINATIONOF BAND OFFSETS, Superlattices and microstructures, 21(4), 1997, pp. 527-532
Authors:
KWASPEN JJM
LEPSA MI
VANDEROER TG
VANDERVLEUTEN W
Citation: Jjm. Kwaspen et al., ACCURATE EQUIVALENT-NETWORK MODELING OF GAAS ALAS BASED RESONANT-TUNNELING DIODES WITH THIN BARRIER LAYERS/, Electronics Letters, 33(19), 1997, pp. 1657-1658
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JOSHI NV
VANDERVLEUTEN W
WOLTER JH
GERRITS AM
Citation: Nv. Joshi et al., DETECTION OF A COMBINATION OF DEFECT ACTIVATED PHONON MODES IN ALAS GAAS SUPERLATTICE STRUCTURE BY FOURIER-TRANSFORM SPECTROSCOPY, Infrared physics & technology, 35(1), 1994, pp. 41-45
Authors:
FOXON CT
CHENG TS
DAWSON P
LACKLISON DE
ORTON JW
VANDERVLEUTEN W
HUGHES OH
HENINI M
Citation: Ct. Foxon et al., EXTERNAL PHOTOLUMINESCENCE EFFICIENCY AND MINORITY-CARRIER LIFETIME OF (AL,GA)AS GAAS MULTI-QUANTUM-WELL SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY USING BOTH AS2 AND AS4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1026-1028
Authors:
LENSSEN KMH
WESTERLING LA
HARMANS CJPM
MOOIJ JE
LEYS MR
VANDERVLEUTEN W
WOLTER JH
Citation: Kmh. Lenssen et al., INFLUENCE OF GATE VOLTAGE ON THE TRANSPORT-PROPERTIES OF SUPERCONDUCTOR 2DEG SYSTEMS, Surface science, 305(1-3), 1994, pp. 476-479
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