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Results: 1-7 |
Results: 7

Authors: VANDERWATER DA KISH FA PEANSKY MJ ROSNER SJ
Citation: Da. Vanderwater et al., ELECTRICAL-CONDUCTION THROUGH COMPOUND SEMICONDUCTOR WAFER BONDED INTERFACES, Journal of crystal growth, 174(1-4), 1997, pp. 213-219

Authors: VANDERWATER DA TAN IH HOFLER GE DEFEVERE DC KISH FA
Citation: Da. Vanderwater et al., HIGH-BRIGHTNESS ALGAINP LIGHT-EMITTING-DIODES, Proceedings of the IEEE, 85(11), 1997, pp. 1752-1764

Authors: KISH FA VANDERWATER DA DEFEVERE DC STEIGERWALD DA HOFLER GE PARK KG STERANKA FM
Citation: Fa. Kish et al., HIGHLY RELIABLE AND EFFICIENT SEMICONDUCTOR WAFER-BONDED ALGAINP GAP LIGHT-EMITTING-DIODES/, Electronics Letters, 32(2), 1996, pp. 132-134

Authors: HOFLER GE VANDERWATER DA DEFEVERE DC KISH FA CAMRAS MD STERANKA FM TAN IH
Citation: Ge. Hofler et al., WAFER BONDING OF 50-MM DIAMETER GAP TO ALGAINP-GAP LIGHT-EMITTING DIODE WAFERS, Applied physics letters, 69(6), 1996, pp. 803-805

Authors: KISH FA VANDERWATER DA PEANASKY MJ LUDOWISE MJ HUMMEL SG ROSNER SJ
Citation: Fa. Kish et al., LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES, Applied physics letters, 67(14), 1995, pp. 2060-2062

Authors: KISH FA DEFEVERE DA VANDERWATER DA TROTT GR WEISS RJ MAJOR JS
Citation: Fa. Kish et al., HIGH LUMINOUS FLUX SEMICONDUCTOR WAFER-BONDED ALGAINP GAP LARGE-AREA EMITTERS/, Electronics Letters, 30(21), 1994, pp. 1790-1792

Authors: KISH FA STERANKA FM DEFEVERE DC VANDERWATER DA PARK KG KUO CP OSENTOWSKI TD PEANASKY MJ YU JG FLETCHER RM STEIGERWALD DA CRAFORD MG ROBBINS VM
Citation: Fa. Kish et al., VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE(ALXGA1-X)0.5IN0.5P GAP LIGHT-EMITTING-DIODES/, Applied physics letters, 64(21), 1994, pp. 2839-2841
Risultati: 1-7 |