Authors:
VANDERWATER DA
KISH FA
PEANSKY MJ
ROSNER SJ
Citation: Da. Vanderwater et al., ELECTRICAL-CONDUCTION THROUGH COMPOUND SEMICONDUCTOR WAFER BONDED INTERFACES, Journal of crystal growth, 174(1-4), 1997, pp. 213-219
Authors:
KISH FA
VANDERWATER DA
DEFEVERE DC
STEIGERWALD DA
HOFLER GE
PARK KG
STERANKA FM
Citation: Fa. Kish et al., HIGHLY RELIABLE AND EFFICIENT SEMICONDUCTOR WAFER-BONDED ALGAINP GAP LIGHT-EMITTING-DIODES/, Electronics Letters, 32(2), 1996, pp. 132-134
Authors:
HOFLER GE
VANDERWATER DA
DEFEVERE DC
KISH FA
CAMRAS MD
STERANKA FM
TAN IH
Citation: Ge. Hofler et al., WAFER BONDING OF 50-MM DIAMETER GAP TO ALGAINP-GAP LIGHT-EMITTING DIODE WAFERS, Applied physics letters, 69(6), 1996, pp. 803-805
Authors:
KISH FA
DEFEVERE DA
VANDERWATER DA
TROTT GR
WEISS RJ
MAJOR JS
Citation: Fa. Kish et al., HIGH LUMINOUS FLUX SEMICONDUCTOR WAFER-BONDED ALGAINP GAP LARGE-AREA EMITTERS/, Electronics Letters, 30(21), 1994, pp. 1790-1792
Authors:
KISH FA
STERANKA FM
DEFEVERE DC
VANDERWATER DA
PARK KG
KUO CP
OSENTOWSKI TD
PEANASKY MJ
YU JG
FLETCHER RM
STEIGERWALD DA
CRAFORD MG
ROBBINS VM
Citation: Fa. Kish et al., VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE(ALXGA1-X)0.5IN0.5P GAP LIGHT-EMITTING-DIODES/, Applied physics letters, 64(21), 1994, pp. 2839-2841