Authors:
VANDORT MJ
SLOTBOOM JW
STREUTKER G
WOERLEE PH
Citation: Mj. Vandort et al., LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION, Microelectronics, 26(2-3), 1995, pp. 301-305
Citation: Mj. Vandort et al., A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS, Solid-state electronics, 37(3), 1994, pp. 411-414
Authors:
VANDORT MJ
LIFKA H
ZALM PC
DEBOER WB
WOERLEE PH
SLOTBOOM JW
COWERN NEB
Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132