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Citation: Mj. Vandort et al., LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION, Microelectronics, 26(2-3), 1995, pp. 301-305

Authors: VANDORT MJ WOERLEE PH WALKER AJ

Citation: Mj. Vandort et al., A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS, Solid-state electronics, 37(3), 1994, pp. 411-414

Authors: VANDORT MJ LIFKA H ZALM PC DEBOER WB WOERLEE PH SLOTBOOM JW COWERN NEB

Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132