Authors: VANMEER H VALENZA M VANDERZANDEN K DERAEDT W SIMOEN E SCHREURS D KAUFMANN L

Citation: H. Vanmeer et al., EFFECT OF SCHOTTKY-BARRIER ALTERATION ON THE LOW-FREQUENCY NOISE OF INP-BASED HEMTS, IEEE electron device letters, 19(10), 1998, pp. 370-372

Authors: SCHREURS D VANMEER H VANDERZANDEN K DERAEDT W NAUWELAERS B VANDECAPELLE A

Citation: D. Schreurs et al., IMPROVED HEMT MODEL FOR LOW PHASE-NOISE INP-BASED MMIC OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1583-1585

Authors: VANMEER H SIMOEN E VALENZA M VANDERZANDEN K DERAEDT W

Citation: H. Vanmeer et al., LOW-FREQUENCY DRAIN CURRENT NOISE BEHAVIOR OF INP BASED MODFETS IN THE LINEAR AND SATURATION REGIME, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2475-2482