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Results: 1-19 |
Results: 19
EFFECT OF ELASTIC-CONSTANTS ON THE STRESSES IN STRIPES AND SUBSTRATES- A 2D FE CALCULATION
Authors: JAIN SC PINARDI K MAES HE VANOVERSTRAETEN R WILLANDER M
Citation: Sc. Jain et al., EFFECT OF ELASTIC-CONSTANTS ON THE STRESSES IN STRIPES AND SUBSTRATES- A 2D FE CALCULATION, Semiconductor science and technology, 13(8), 1998, pp. 864-870
A METHOD TO INTERPRET MICRO-RAMAN EXPERIMENTS MADE TO MEASURE NONUNIFORM STRESSES - APPLICATION TO LOCAL OXIDATION OF SILICON STRUCTURES
Authors: PINARDI K JAIN SC WILLANDER M ATKINSON A MAES HE VANOVERSTRAETEN R
Citation: K. Pinardi et al., A METHOD TO INTERPRET MICRO-RAMAN EXPERIMENTS MADE TO MEASURE NONUNIFORM STRESSES - APPLICATION TO LOCAL OXIDATION OF SILICON STRUCTURES, Journal of applied physics, 84(5), 1998, pp. 2507-2512
CRITICAL THICKNESS AND STRAIN RELAXATION IN LATTICE-MISMATCHED II-VI SEMICONDUCTOR LAYERS
Authors: PINARDI K JAIN U JAIN SC MAES HE VANOVERSTRAETEN R WILLANDER M
Citation: K. Pinardi et al., CRITICAL THICKNESS AND STRAIN RELAXATION IN LATTICE-MISMATCHED II-VI SEMICONDUCTOR LAYERS, Journal of applied physics, 83(9), 1998, pp. 4724-4733
IMPACT OF THE TRANSMISSION-LINE PROPERTIES OF A METAL ULTRATHIN SILICON DIOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON THE EXTRACTED INVERSION-LAYER THICKNESS
Authors: KOLDYAEV VI CLERIX A DEFERM L VANOVERSTRAETEN R
Citation: Vi. Koldyaev et al., IMPACT OF THE TRANSMISSION-LINE PROPERTIES OF A METAL ULTRATHIN SILICON DIOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON THE EXTRACTED INVERSION-LAYER THICKNESS, Journal of applied physics, 83(4), 1998, pp. 2131-2138
A POLYMERIC ACID SENSOR CAPABLE OF MEASURING THE SEVERITY OF HEARTBURN
Authors: TACK J VANTRAPPEN G HUYBRECHTS G VOS R JANSSENS J VANOVERSTRAETEN R
Citation: J. Tack et al., A POLYMERIC ACID SENSOR CAPABLE OF MEASURING THE SEVERITY OF HEARTBURN, Gastroenterology, 114(4), 1998, pp. 1230-1230
SEMICONDUCTOR STRAINED LAYERS
Authors: JAIN SC MAES HE VANOVERSTRAETEN R
Citation: Sc. Jain et al., SEMICONDUCTOR STRAINED LAYERS, Current opinion in solid state & materials science, 2(6), 1997, pp. 722-727
RAMAN-SPECTRA OF GE0.11SI0.89 STRAINED QUANTUM WIRES
Authors: JAIN SC PINARDI K MAES HE VANOVERSTRAETEN R ATKINSON A WILLANDER M
Citation: Sc. Jain et al., RAMAN-SPECTRA OF GE0.11SI0.89 STRAINED QUANTUM WIRES, Semiconductor science and technology, 12(11), 1997, pp. 1507-1510
TRENDS IN INDUSTRIAL SILICON SOLAR-CELL PROCESSES
Authors: GHANNAM M SIVOTHTHAMAN S POORTMANS J SZLUFCIK J NIJS J MERTENS R VANOVERSTRAETEN R
Citation: M. Ghannam et al., TRENDS IN INDUSTRIAL SILICON SOLAR-CELL PROCESSES, Solar energy, 59(1-3), 1997, pp. 101-110
LOW-COST INDUSTRIAL TECHNOLOGIES OF CRYSTALLINE SILICON SOLAR-CELLS
Authors: SZLUFCIK J SIVOTHTHAMAN S NIJS JF MERTENS RP VANOVERSTRAETEN R
Citation: J. Szlufcik et al., LOW-COST INDUSTRIAL TECHNOLOGIES OF CRYSTALLINE SILICON SOLAR-CELLS, Proceedings of the IEEE, 85(5), 1997, pp. 711-730
FURTHER VALIDATION STUDIES ON THE DISPOSABLE ACID BURDEN SENSOR
Authors: VANTRAPPEN G HUYBRECHTS G TACK J HONORE M JANSSENS J VANOVERSTRAETEN R
Citation: G. Vantrappen et al., FURTHER VALIDATION STUDIES ON THE DISPOSABLE ACID BURDEN SENSOR, Gastroenterology, 112(4), 1997, pp. 321-321
RECENT IMPROVEMENTS IN THE SCREENPRINTING TECHNOLOGY AND COMPARISON WITH THE BURIED CONTACT TECHNOLOGY BY 2D-SIMULATION
Authors: NIJS J DEMESMAEKER E SZLUFCIK J POORTMANS J FRISSON L DECLERCQ K GHANNAM M MERTENS R VANOVERSTRAETEN R
Citation: J. Nijs et al., RECENT IMPROVEMENTS IN THE SCREENPRINTING TECHNOLOGY AND COMPARISON WITH THE BURIED CONTACT TECHNOLOGY BY 2D-SIMULATION, Solar energy materials and solar cells, 41-2, 1996, pp. 101-117
ACID-INDUCED DAMAGE OF THE ESOPHAGEAL MUCOSA CAN BE EVALUATED WITH A DISPOSABLE PROBE
Authors: VANTRAPPEN G HUYBERECHTS G JANSSENS J SIFRIM D MEBIS J GEBOES K HONORE M VANOVERSTRAETEN R
Citation: G. Vantrappen et al., ACID-INDUCED DAMAGE OF THE ESOPHAGEAL MUCOSA CAN BE EVALUATED WITH A DISPOSABLE PROBE, Gastroenterology, 110(4), 1996, pp. 285-285
A DISPOSABLE PROBE TO MEASURE THE ESOPHAGEAL ACID BURDEN
Authors: VANTRAPPEN G JANSSENS J HUYBERECHTS G VANOVERSTRAETEN R
Citation: G. Vantrappen et al., A DISPOSABLE PROBE TO MEASURE THE ESOPHAGEAL ACID BURDEN, Gastroenterology, 108(4), 1995, pp. 250-250
CRYSTALLINE SILICON SOLAR-CELLS
Authors: VANOVERSTRAETEN R
Citation: R. Vanoverstraeten, CRYSTALLINE SILICON SOLAR-CELLS, Renewable energy, 5(1-4), 1994, pp. 103-106
BOOSTING THE EFFICIENCY OF SOLAR-CELLS FABRICATED ON ELECTROMAGNETIC COLD CRUCIBLE CAST MULTICRYSTALLINE SILICON BY MEANS OF HYDROGEN PASSIVATION
Authors: ELGAMEL HE GHANNAM MY VINCKIER C NIJS J MERTENS R VANOVERSTRAETEN R
Citation: He. Elgamel et al., BOOSTING THE EFFICIENCY OF SOLAR-CELLS FABRICATED ON ELECTROMAGNETIC COLD CRUCIBLE CAST MULTICRYSTALLINE SILICON BY MEANS OF HYDROGEN PASSIVATION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 237-241
STRESS-RELAXATION IN LATERALLY SMALL STRAINED SEMICONDUCTOR EPILAYERS
Authors: VANMIEGHEM P JAIN SC NIJS J VANOVERSTRAETEN R
Citation: P. Vanmieghem et al., STRESS-RELAXATION IN LATERALLY SMALL STRAINED SEMICONDUCTOR EPILAYERS, Journal of applied physics, 75(1), 1994, pp. 666-668
THEORETICAL CALCULATION AND EXPERIMENTAL-EVIDENCE OF THE REAL AND APPARENT BANDGAP NARROWING DUE TO HEAVY DOPING IN P-TYPE SI AND STRAINED SI1-XGEX LAYERS
Authors: POORTMANS J JAIN SC TOTTERDELL DHJ CAYMAX M NIJS JF MERTENS RP VANOVERSTRAETEN R
Citation: J. Poortmans et al., THEORETICAL CALCULATION AND EXPERIMENTAL-EVIDENCE OF THE REAL AND APPARENT BANDGAP NARROWING DUE TO HEAVY DOPING IN P-TYPE SI AND STRAINED SI1-XGEX LAYERS, Solid-state electronics, 36(12), 1993, pp. 1763-1771
ELECTRICAL AND OPTICAL BANDGAPS OF GEXSI1-X STRAINED LAYERS
Authors: JAIN SC POORTMANS J IYER SS LOFERSKI JJ NIJS J MERTENS R VANOVERSTRAETEN R
Citation: Sc. Jain et al., ELECTRICAL AND OPTICAL BANDGAPS OF GEXSI1-X STRAINED LAYERS, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2338-2343
35-PERCENT EFFICIENT NONCONCENTRATING NOVEL SILICON SOLAR-CELL - COMMENT
Authors: DEMESMAEKER E GHANNAM M NIJS J MERTENS R VANOVERSTRAETEN R AULICH HA WIETING R RODOT M MULLER JC
Citation: E. Demesmaeker et al., 35-PERCENT EFFICIENT NONCONCENTRATING NOVEL SILICON SOLAR-CELL - COMMENT, Applied physics letters, 63(6), 1993, pp. 849-849
Risultati: 1-19 |