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Results: 1-17 |
Results: 17

Authors: MAHALINGAM K DORSEY DL EVANS KR VENKATASUBRAMANIAN R
Citation: K. Mahalingam et al., A MONTE-CARLO STUDY OF GALLIUM DESORPTION-KINETICS DURING MBE OF (100)-GAAS ALGAAS HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 211-215

Authors: VENKATASUBRAMANIAN R DORSEY DL MAHALINGAM K
Citation: R. Venkatasubramanian et al., HEURISTIC RULES FOR GROUP-IV DOPANT SITE SELECTION IN III-V COMPOUNDS, Journal of crystal growth, 175, 1997, pp. 224-228

Authors: VENKATASUBRAMANIAN R COLPITTS T WATKO E LAMVIK M ELMASRY N
Citation: R. Venkatasubramanian et al., MOCVD OF BI2TE3, SB2TE3 AND THEIR SUPERLATTICE STRUCTURES FOR THIN-FILM THERMOELECTRIC APPLICATIONS, Journal of crystal growth, 170(1-4), 1997, pp. 817-821

Authors: SAKSENA MD VENKATASUBRAMANIAN R SINGH M
Citation: Md. Saksena et al., VIBRATIONAL STRUCTURE OF THE A(3)PI(0)-X-1-SIGMA(-3-PI(1)-X-1-SIGMA(+) TRANSITIONS OF GALLIUM MONOCHLORIDE() AND B), Canadian journal of physics, 75(4), 1997, pp. 191-196

Authors: LEE SM CAHILL DG VENKATASUBRAMANIAN R
Citation: Sm. Lee et al., THERMAL-CONDUCTIVITY OF SI-GE SUPERLATTICES, Applied physics letters, 70(22), 1997, pp. 2957-2959

Authors: VENKATASUBRAMANIAN R PAMULA VK DORSEY DL
Citation: R. Venkatasubramanian et al., INFLUENCE OF PHYSISORBED ARSENIC ON RHEED INTENSITY OSCILLATIONS DURING LOW-TEMPERATURE GAAS MOLECULAR-BEAM EPITAXY, Applied surface science, 104, 1996, pp. 448-454

Authors: VENKATASUBRAMANIAN R GORANTLA S MUTHUVENKATRAMAN S DORSEY DL
Citation: R. Venkatasubramanian et al., A STOCHASTIC-MODEL FOR CRYSTAL-AMORPHOUS TRANSITION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI(111), Journal of applied physics, 80(11), 1996, pp. 6219-6222

Authors: MAHESHWARLA SV VENKATASUBRAMANIAN R
Citation: Sv. Maheshwarla et R. Venkatasubramanian, OSCILLATIONS IN COLLECTOR CURRENT OF A DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTOR - A QUANTUM EFFECT, Superlattices and microstructures, 18(3), 1995, pp. 187-196

Authors: MAHESHWARLA SV VENKATASUBRAMANIAN R BOEHM RF
Citation: Sv. Maheshwarla et al., COMPARISON OF TIME-DOMAIN REFLECTOMETRY PERFORMANCE-FACTORS FOR SEVERAL DIELECTRIC GEOMETRIES - THEORY AND EXPERIMENTS, Water resources research, 31(8), 1995, pp. 1927-1933

Authors: VENKATASUBRAMANIAN R
Citation: R. Venkatasubramanian, ON THE AREA OF INTERSECTION BETWEEN 2 CLOSED 2-D OBJECTS, Information sciences, 82(1-2), 1995, pp. 25-44

Authors: HUTCHBY JA TIMMONS ML VENKATASUBRAMANIAN R SHARPS PR WHISNANT RA
Citation: Ja. Hutchby et al., HIGH-EFFICIENCY TANDEM SOLAR-CELLS ON SINGLE-CRYSTALLINE AND POLYCRYSTALLINE SUBSTRATES, Solar energy materials and solar cells, 35(1-4), 1994, pp. 9-24

Authors: VENKATASUBRAMANIAN R TIMMONS ML
Citation: R. Venkatasubramanian et Ml. Timmons, OPTOELECTRONIC PROPERTIES OF EUTECTIC-METAL BONDED (EMB) GAAS-ALGAAS STRUCTURES ON SI SUBSTRATES, Solid-state electronics, 37(11), 1994, pp. 1809-1815

Authors: VENKATASUBRAMANIAN R SAKSENA MD SINGH M
Citation: R. Venkatasubramanian et al., HIGH-RESOLUTION STUDIES OF THE ELECTRONIC-SPECTRUM OF (GACL)-GA-69, Journal of molecular spectroscopy, 168(2), 1994, pp. 290-300

Authors: SINGH M VENKATASUBRAMANIAN R BALASUBRAMANIAN TK ATHALYE VV
Citation: M. Singh et al., SETTING UP OF AN ISOTOPE ANALYZER FOR QUANTITATIVE-DETERMINATION OF PERCENTAGE ABUNDANCE OF N-15 IN NITROGEN GAS, Analytical letters, 27(12), 1994, pp. 2369-2376

Authors: VENKATASUBRAMANIAN R DORSEY DL
Citation: R. Venkatasubramanian et Dl. Dorsey, MOLECULAR-BEAM EPITAXIAL-GROWTH SURFACE ROUGHENING KINETICS OF GE (001) - A THEORETICAL-STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 253-258

Authors: THANIKASALAM P VENKATASUBRAMANIAN R CAHAY M
Citation: P. Thanikasalam et al., ANALYTICAL EXPRESSIONS FOR TUNNELING TIME THROUGH SINGLE AND DOUBLE-BARRIER STRUCTURES, IEEE journal of quantum electronics, 29(9), 1993, pp. 2451-2458

Authors: VENKATASUBRAMANIAN R SAKSENA MD SINGH M
Citation: R. Venkatasubramanian et al., NEW VISIBLE EMISSION-SPECTRA OF GABR, GACL AND INCL - PROSPECTS OF NEW LASER TRANSITIONS, Chemical physics letters, 210(4-6), 1993, pp. 367-372
Risultati: 1-17 |