Authors:
MAHALINGAM K
DORSEY DL
EVANS KR
VENKATASUBRAMANIAN R
Citation: K. Mahalingam et al., A MONTE-CARLO STUDY OF GALLIUM DESORPTION-KINETICS DURING MBE OF (100)-GAAS ALGAAS HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 211-215
Authors:
VENKATASUBRAMANIAN R
DORSEY DL
MAHALINGAM K
Citation: R. Venkatasubramanian et al., HEURISTIC RULES FOR GROUP-IV DOPANT SITE SELECTION IN III-V COMPOUNDS, Journal of crystal growth, 175, 1997, pp. 224-228
Authors:
VENKATASUBRAMANIAN R
COLPITTS T
WATKO E
LAMVIK M
ELMASRY N
Citation: R. Venkatasubramanian et al., MOCVD OF BI2TE3, SB2TE3 AND THEIR SUPERLATTICE STRUCTURES FOR THIN-FILM THERMOELECTRIC APPLICATIONS, Journal of crystal growth, 170(1-4), 1997, pp. 817-821
Citation: Md. Saksena et al., VIBRATIONAL STRUCTURE OF THE A(3)PI(0)-X-1-SIGMA(-3-PI(1)-X-1-SIGMA(+) TRANSITIONS OF GALLIUM MONOCHLORIDE() AND B), Canadian journal of physics, 75(4), 1997, pp. 191-196
Citation: R. Venkatasubramanian et al., INFLUENCE OF PHYSISORBED ARSENIC ON RHEED INTENSITY OSCILLATIONS DURING LOW-TEMPERATURE GAAS MOLECULAR-BEAM EPITAXY, Applied surface science, 104, 1996, pp. 448-454
Authors:
VENKATASUBRAMANIAN R
GORANTLA S
MUTHUVENKATRAMAN S
DORSEY DL
Citation: R. Venkatasubramanian et al., A STOCHASTIC-MODEL FOR CRYSTAL-AMORPHOUS TRANSITION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI(111), Journal of applied physics, 80(11), 1996, pp. 6219-6222
Citation: Sv. Maheshwarla et R. Venkatasubramanian, OSCILLATIONS IN COLLECTOR CURRENT OF A DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTOR - A QUANTUM EFFECT, Superlattices and microstructures, 18(3), 1995, pp. 187-196
Authors:
MAHESHWARLA SV
VENKATASUBRAMANIAN R
BOEHM RF
Citation: Sv. Maheshwarla et al., COMPARISON OF TIME-DOMAIN REFLECTOMETRY PERFORMANCE-FACTORS FOR SEVERAL DIELECTRIC GEOMETRIES - THEORY AND EXPERIMENTS, Water resources research, 31(8), 1995, pp. 1927-1933
Authors:
HUTCHBY JA
TIMMONS ML
VENKATASUBRAMANIAN R
SHARPS PR
WHISNANT RA
Citation: Ja. Hutchby et al., HIGH-EFFICIENCY TANDEM SOLAR-CELLS ON SINGLE-CRYSTALLINE AND POLYCRYSTALLINE SUBSTRATES, Solar energy materials and solar cells, 35(1-4), 1994, pp. 9-24
Citation: R. Venkatasubramanian et Ml. Timmons, OPTOELECTRONIC PROPERTIES OF EUTECTIC-METAL BONDED (EMB) GAAS-ALGAAS STRUCTURES ON SI SUBSTRATES, Solid-state electronics, 37(11), 1994, pp. 1809-1815
Citation: R. Venkatasubramanian et al., HIGH-RESOLUTION STUDIES OF THE ELECTRONIC-SPECTRUM OF (GACL)-GA-69, Journal of molecular spectroscopy, 168(2), 1994, pp. 290-300
Authors:
SINGH M
VENKATASUBRAMANIAN R
BALASUBRAMANIAN TK
ATHALYE VV
Citation: M. Singh et al., SETTING UP OF AN ISOTOPE ANALYZER FOR QUANTITATIVE-DETERMINATION OF PERCENTAGE ABUNDANCE OF N-15 IN NITROGEN GAS, Analytical letters, 27(12), 1994, pp. 2369-2376
Citation: R. Venkatasubramanian et Dl. Dorsey, MOLECULAR-BEAM EPITAXIAL-GROWTH SURFACE ROUGHENING KINETICS OF GE (001) - A THEORETICAL-STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 253-258
Authors:
THANIKASALAM P
VENKATASUBRAMANIAN R
CAHAY M
Citation: P. Thanikasalam et al., ANALYTICAL EXPRESSIONS FOR TUNNELING TIME THROUGH SINGLE AND DOUBLE-BARRIER STRUCTURES, IEEE journal of quantum electronics, 29(9), 1993, pp. 2451-2458
Citation: R. Venkatasubramanian et al., NEW VISIBLE EMISSION-SPECTRA OF GABR, GACL AND INCL - PROSPECTS OF NEW LASER TRANSITIONS, Chemical physics letters, 210(4-6), 1993, pp. 367-372