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Authors: VEZIN V SUGAWARA T KOMATSU R UDA S
Citation: V. Vezin et al., CHARACTERIZATION OF DEFECTS IN LI2B4O7 CRYSTALS GROWN BY CZOCHRALSKI AND BRIDGMAN METHODS, JPN J A P 1, 36(9B), 1997, pp. 5950-5953

Authors: VEZIN V INUI S YAMAGUCHI K SUGAWARA T KOMATSU R UDA S YAMANOUCHI K
Citation: V. Vezin et al., FACTORS INFLUENCING THE VARIATION OF SURFACE-ACOUSTIC-WAVE VELOCITY IN LITHIUM TETRABORATE, JPN J A P 1, 36(5B), 1997, pp. 3074-3075

Authors: VEZIN V YATAGAI S SHIRAKI H UDA S
Citation: V. Vezin et al., GROWTH OF GA1-XBXN BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 36(11B), 1997, pp. 1483-1485

Authors: GOUDEAU P NAUDON A VEZIN V HALIMAOUI A BOMCHIL G LAMBERT B
Citation: P. Goudeau et al., CORRELATION BETWEEN THE POROUS SILICON MORPHOLOGY AND THE PHOTOLUMINESCENCE EFFICIENCY - A SAXS STUDY, Physica status solidi. b, Basic research, 190(1), 1995, pp. 63-68

Authors: VEZIN V OKUDA H OSAMURA K AMEMIYA Y KITAHARA K NAKAJIMA K
Citation: V. Vezin et al., STUDY OF GALLIUM-ARSENIDE ON SILICON BY SMALL-ANGLE X-RAY-SCATTERING, Journal de physique. IV, 3(C8), 1993, pp. 381-384
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