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Results:
1-7
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Results: 7
Authors:
OCHALSKI TJ
ZUK J
VLASUKOVA LA
Citation: Tj. Ochalski et al., EFFECT OF EPITAXIAL LAYER THICKNESS ON BUILT-IN ELECTRIC-FIELD IN REGION OF ALGAAS SI-GAAS INTERFACE - A PHOTOREFLECTANCE STUDY/, Acta Physica Polonica. A, 92(5), 1997, pp. 935-939
Authors:
KUTAS AA
KOVYAZINA TV
AKIMOV AN
GUSAKOV GA
KOMAROV FF
NOVIKOV AP
VLASUKOVA LA
Citation: Aa. Kutas et al., DYNAMIC ANNEALING OF DAMAGE IN AR-IMPLANTED GAAS CRYSTALS(), Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 32-35
Authors:
AKIMOV AN
VLASUKOVA LA
GUSAKOV GA
KOMAROV FF
KUTAS AA
NOVIKOV AP
Citation: An. Akimov et al., ION-INDUCED ANNEALING OF DAMAGE IN GAAS IMPLANTED WITH ARGON IONS, Radiation effects and defects in solids, 129(3-4), 1994, pp. 147-154
Authors:
VLASUKOVA LA
Citation: La. Vlasukova, ETCHING GAAS SINGLE-CRYSTALS AND EPITAXIAL LAYERS IN AN A B SOLUTION/, Inorganic materials, 29(12), 1993, pp. 1424-1426
Authors:
VLASUKOVA LA
Citation: La. Vlasukova, ETCHING SINGLE-CRYSTALS AND EPITAXIAL LAYERS OF (001)-ORIENTED GAAS BY HYDROXIDE MELTS, Inorganic materials, 29(12), 1993, pp. 1427-1430
Authors:
VLASUKOVA LA
Citation: La. Vlasukova, REVEALING THE BOUNDARIES IN EPITAXIAL STRUCTURES BASED ON A(III)B(V) COMPOUNDS, Inorganic materials, 29(12), 1993, pp. 1431-1434
ON THE TECHNIQUE OF REVEALING EPITAXIAL BOUNDARIES IN HETEROSTRUCTURES BASED ON A(III)B(V) COMPOUNDS
Authors:
VLASUKOVA LA
Citation: La. Vlasukova, ON THE TECHNIQUE OF REVEALING EPITAXIAL BOUNDARIES IN HETEROSTRUCTURES BASED ON A(III)B(V) COMPOUNDS, Inorganic materials, 29(12), 1993, pp. 1435-1438
Risultati:
1-7
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