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Results: 1-25/69
Authors:
VONKANEL H
MEYER T
KLEMENC M
Citation: H. Vonkanel et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY ON EPITAXIAL SILICIDES, JPN J A P 1, 37(6B), 1998, pp. 3800-3804
Authors:
ROSENBLAD C
DELLER HR
DOMMANN A
MEYER T
SCHROETER P
VONKANEL H
Citation: C. Rosenblad et al., SILICON EPITAXY BY LOW-ENERGY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2785-2790
Authors:
VONKANEL H
MEYER T
Citation: H. Vonkanel et T. Meyer, RECENT PROGRESS ON BEEM, Ultramicroscopy, 73(1-4), 1998, pp. 175-183
Authors:
MEYER T
VONKANEL H
Citation: T. Meyer et H. Vonkanel, DIFFUSION OF INTERFACIAL POINT-DEFECTS STUDIED BY BEEM, Applied surface science, 123, 1998, pp. 243-248
Authors:
ROSENBLAD C
DELLER HR
DOBELI M
MULLER E
VONKANEL H
Citation: C. Rosenblad et al., LOW-TEMPERATURE HETEROEPITAXY BY LEPECVD, Thin solid films, 318(1-2), 1998, pp. 11-14
Authors:
VOGELI B
ZIMMERMANN S
VONKANEL H
Citation: B. Vogeli et al., STM STUDY ON SILICON(001) GROWN BY MAGNETRON SPUTTER EPITAXY, Thin solid films, 318(1-2), 1998, pp. 29-32
Authors:
MEYER T
SIRRINGHAUS H
VONKANEL H
Citation: T. Meyer et al., STUDYING INTERFACES ON A NM SCALE BY BEEM, Thin solid films, 318(1-2), 1998, pp. 195-200
Authors:
ROSENBLAD C
DELLER HR
GRAF T
MULLER E
VONKANEL H
Citation: C. Rosenblad et al., LOW-TEMPERATURE EPITAXIAL-GROWTH BY LEPECVD, Journal of crystal growth, 188(1-4), 1998, pp. 125-130
Authors:
FANCIULLI M
ROSENBLAD C
WEYER G
SVANE A
CHRISTENSEN NE
VONKANEL H
RODRIGUEZ CO
Citation: M. Fanciulli et al., THE ELECTRONIC CONFIGURATION OF FE IN BETA-FESI2, Journal of physics. Condensed matter, 9(7), 1997, pp. 1619-1630
Authors:
FANCIULLI M
WEYER G
CHEVALLIER J
VONKANEL H
DELLER H
ONDA N
MIGLIO L
TAVAZZA F
CELINO M
Citation: M. Fanciulli et al., SELF-ORGANIZED LAYERED STRUCTURE IN EPITAXIALLY STABILIZED FESI, Europhysics letters, 37(2), 1997, pp. 139-144
Authors:
VONKANEL H
SIRRINGHAUS H
MEYER T
LEE EY
Citation: H. Vonkanel et al., ELECTRONIC TRANSPORT IN EPITAXIAL-FILMS STUDIED BY SCANNING PROBE TECHNIQUES, Surface review and letters, 4(2), 1997, pp. 307-318
Authors:
GONCALVESCONTO S
SCHARER U
MULLER E
VONKANEL H
MIGLIO L
TAVAZZA F
Citation: S. Goncalvesconto et al., COMPETITIVE METASTABLE PHASE IN LOW-TEMPERATURE EPITAXY OF COSI2 SI(111)/, Physical review. B, Condensed matter, 55(11), 1997, pp. 7213-7221
Authors:
VONKANEL H
MEYER T
SIRRINGHAUS H
LEE EY
Citation: H. Vonkanel et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AT EPITAXIAL METAL SEMICONDUCTOR INTERFACES/, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 44(2), 1997, pp. 157-163
Authors:
VONKANEL H
MEYER T
Citation: H. Vonkanel et T. Meyer, SPECTROSCOPY ON MBE-GROWN INTERFACES WITH HIGH-SPATIAL-RESOLUTION, Thin solid films, 306(2), 1997, pp. 214-219
Authors:
MEYER T
VONKANEL H
Citation: T. Meyer et H. Vonkanel, STUDY OF INTERFACIAL POINT-DEFECTS BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 78(16), 1997, pp. 3133-3136
Authors:
VONKANEL H
MEYER T
SIRRINGHAUS H
Citation: H. Vonkanel et al., IN-SITU BEEM STUDY OF INTERFACIAL DISLOCATIONS AND POINT-DEFECTS, Journal of crystal growth, 175, 1997, pp. 340-345
Authors:
HAMMOND R
PHILLIPS PJ
WHALL TE
PARKER EHC
GRAF T
VONKANEL H
SHIELDS AJ
Citation: R. Hammond et al., THE ELIMINATION OF SURFACE CROSS-HATCH FROM RELAXED, LIMITED-AREA SI1-XGEX BUFFER LAYERS, Applied physics letters, 71(17), 1997, pp. 2517-2519
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., ATOMIC-SCALE VARIATIONS OF THE STM TUNNELING DISTRIBUTION OBSERVED BYBALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physica scripta. T, T66, 1996, pp. 282-286
Authors:
VONKANEL H
MULLER E
GONCALVESCONTO S
SCHWARZ C
ONDA N
Citation: H. Vonkanel et al., STRUCTURAL-PROPERTIES OF EPITAXIAL SILICIDE LAYERS ON SI, Applied surface science, 104, 1996, pp. 204-212
Authors:
SUTTER P
VOGELI B
MULLER E
VONKANEL H
DOMMANN A
Citation: P. Sutter et al., SPUTTER EPITAXY OF STEP-GRADED SI1-XGEX SI(001) - EVOLUTION OF DEFECTS AND SURFACE-MORPHOLOGY/, Applied surface science, 102, 1996, pp. 33-37
Authors:
LANGE H
HENRION W
SELLE B
REINSPERGER GU
OERTEL G
VONKANEL H
Citation: H. Lange et al., OPTICAL-PROPERTIES OF BETA-FESI2 FILMS GROWN ON SI SUBSTRATES WITH DIFFERENT DEGREE OF STRUCTURAL PERFECTION, Applied surface science, 102, 1996, pp. 169-172
Authors:
STETTNER J
SCHWALOWSKY L
SEECK OH
TOLAN M
PRESS W
SCHWARZ C
VONKANEL H
Citation: J. Stettner et al., INTERFACE STRUCTURE OF MBE-GROWN COSI2 SI/COSI2 LAYERS ON SI(111) - PARTIALLY CORRELATED ROUGHNESS AND DIFFUSE-X-RAY SCATTERING/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1398-1412
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., SPATIAL VARIATIONS OF HOT-CARRIER TRANSMISSION ACROSS COSI2 SI INTERFACES ON A NANOMETER-SCALE/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15944-15950
Authors:
FANCIULLI M
ROSENBLAD C
WEYER G
VONKANEL H
ONDA N
Citation: M. Fanciulli et al., CONVERSION ELECTRON MOSSBAUER-SPECTROSCOPY STUDY OF IRON DISILICIDE FILMS GROWN BY MBE, Thin solid films, 275(1-2), 1996, pp. 8-11
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AS A PROBE FOR SURFACE SCIENCE, Surface science, 358(1-3), 1996, pp. 386-393