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Results: 1-25 | 26-30 |
Results: 26-30/30
ALKYL-TRICHLOROSILANE MONOLAYER AS ULTRA-THIN INSULATING FILM FOR SILICON MIS DEVICES
Authors: VUILLAUME D FONTAINE P COLLET J DERESMES D GARET M RONDELEZ F
Citation: D. Vuillaume et al., ALKYL-TRICHLOROSILANE MONOLAYER AS ULTRA-THIN INSULATING FILM FOR SILICON MIS DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 101-104
AN IMPROVED THEORY OF SPIN-DEPENDENT RECOMBINATION - APPLICATION TO THE PB CENTER AT THE SI-SIO2 INTERFACE
Authors: LANNOO M VUILLAUME D DERESMES D STIEVENARD D
Citation: M. Lannoo et al., AN IMPROVED THEORY OF SPIN-DEPENDENT RECOMBINATION - APPLICATION TO THE PB CENTER AT THE SI-SIO2 INTERFACE, Microelectronic engineering, 22(1-4), 1993, pp. 143-146
THE NATURE OF INTERFACE STATES GENERATED BY HIGH-FIELD INJECTION
Authors: VUILLAUME D
Citation: D. Vuillaume, THE NATURE OF INTERFACE STATES GENERATED BY HIGH-FIELD INJECTION, Microelectronic engineering, 22(1-4), 1993, pp. 201-206
STUDY OF DEFECTS INDUCED BY HIGH-ELECTRIC-FIELD STRESS INTO A THIN GATE OXIDE (11 NM) OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: ELHDIY A SALACE G PETIT C JOURDAIN M VUILLAUME D
Citation: A. Elhdiy et al., STUDY OF DEFECTS INDUCED BY HIGH-ELECTRIC-FIELD STRESS INTO A THIN GATE OXIDE (11 NM) OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 74(2), 1993, pp. 1124-1130
OCTADECYLTRICHLOROSILANE MONOLAYERS AS ULTRATHIN GATE INSULATING FILMS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES
Authors: FONTAINE P GOGUENHEIM D DERESMES D VUILLAUME D GARET M RONDELEZ F
Citation: P. Fontaine et al., OCTADECYLTRICHLOROSILANE MONOLAYERS AS ULTRATHIN GATE INSULATING FILMS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES, Applied physics letters, 62(18), 1993, pp. 2256-2258
Risultati: 1-25 | 26-30 |