Authors: Vandamme, EP Schreurs, D van Dinther, C

Citation: Ep. Vandamme et al., Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it, INT J RF MI, 11(3), 2001, pp. 114-120

Authors: Vandamme, EP Schreurs, DMMP van Dinther, G

Citation: Ep. Vandamme et al., Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures, IEEE DEVICE, 48(4), 2001, pp. 737-742

Authors: Vandamme, EP Vandamme, LKJ

Citation: Ep. Vandamme et Lkj. Vandamme, Current crowding and its effect on 1/f noise and third harmonic distortion- a case study for quality assessment of resistors, MICROEL REL, 40(11), 2000, pp. 1847-1853

Authors: Augendre, E Rooyackers, R Caymax, M Vandamme, EP De Keersgieter, A Perello, C Van Dievel, M Pochet, S Badenes, G

Citation: E. Augendre et al., Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity, IEEE DEVICE, 47(7), 2000, pp. 1484-1491

Authors: Vandamme, EP Vandamme, LKJ

Citation: Ep. Vandamme et Lkj. Vandamme, Critical discussion on unified 1/f noise models for MOSFETs, IEEE DEVICE, 47(11), 2000, pp. 2146-2152