Authors: Vanhollebeke, K D'Hondt, M Moerman, I Van Daele, P Demeester, P

Citation: K. Vanhollebeke et al., Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD), J ELEC MAT, 30(8), 2001, pp. 951-959

Authors: Vanhollebeke, K D'Hondt, M Moerman, I Van Daele, P Demeester, P

Citation: K. Vanhollebeke et al., MOVPE based Zn diffusion into InP and InAsP/InP hetero structures, J CRYST GR, 233(1-2), 2001, pp. 132-140

Authors: Vanhollebeke, K Moerman, I Van Daele, P Demeester, P

Citation: K. Vanhollebeke et al., Compliant substrate technology: Integration of mismatched materials for opto-electronic applications, PROG CRYST, 41(1-4), 2000, pp. 1-55

Authors: Vanhollebeke, K Moerman, I Van Daele, P Demeester, P

Citation: K. Vanhollebeke et al., Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates, J ELEC MAT, 29(7), 2000, pp. 933-939

Authors: Vanhollebeke, K Considine, L Moerman, I Demeester, P Thrush, EJ Crawley, JA

Citation: K. Vanhollebeke et al., Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor, J CRYST GR, 195(1-4), 1998, pp. 644-647