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Results:
1-7
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Results: 7
Authors:
Lichti, RL
Cox, SFJ
Dawdy, MR
Head, TL
Hitti, B
Molnar, RJ
Schwab, C
Vaudo, RP
Citation: Rl. Lichti et al., Sites and motion of Mu(-) defect centers in n-type gallium nitride, PHYSICA B, 289, 2000, pp. 542-545
Authors:
Kelly, MK
Vaudo, RP
Phanse, VM
Gorgens, L
Ambacher, O
Stutzmann, M
Citation: Mk. Kelly et al., Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff, JPN J A P 2, 38(3A), 1999, pp. L217-L219
Authors:
Smith, GM
Redwing, JM
Vaudo, RP
Ross, EM
Flynn, JS
Phanse, VM
Citation: Gm. Smith et al., Substrate effects on GaN photoconductive detector performance, APPL PHYS L, 75(1), 1999, pp. 25-27
Authors:
Bandic, ZZ
Bridger, PM
Piquette, EC
McGill, TC
Vaudo, RP
Phanse, VM
Redwing, JM
Citation: Zz. Bandic et al., High voltage (450 V) GaN schottky rectifiers, APPL PHYS L, 74(9), 1999, pp. 1266-1268
Authors:
Skromme, BJ
Jayapalan, J
Vaudo, RP
Phanse, VM
Citation: Bj. Skromme et al., Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 74(16), 1999, pp. 2358-2360
Authors:
Golan, Y
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
Citation: Y. Golan et al., Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (vol 73, pg 3090, 1998), APPL PHYS L, 74(10), 1999, pp. 1498-1498
Authors:
Jayapalan, J
Skromme, BJ
Vaudo, RP
Phanse, VM
Citation: J. Jayapalan et al., Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1188-1190
Risultati:
1-7
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