Authors:
Kelly, MK
Vaudo, RP
Phanse, VM
Gorgens, L
Ambacher, O
Stutzmann, M
Citation: Mk. Kelly et al., Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff, JPN J A P 2, 38(3A), 1999, pp. L217-L219
Authors:
Skromme, BJ
Jayapalan, J
Vaudo, RP
Phanse, VM
Citation: Bj. Skromme et al., Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 74(16), 1999, pp. 2358-2360
Authors:
Golan, Y
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
Citation: Y. Golan et al., Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (vol 73, pg 3090, 1998), APPL PHYS L, 74(10), 1999, pp. 1498-1498
Authors:
Jayapalan, J
Skromme, BJ
Vaudo, RP
Phanse, VM
Citation: J. Jayapalan et al., Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1188-1190