Authors:
Manimaran, M
Vaya, PR
Basu, S
Sato, T
Kanayama, T
Citation: M. Manimaran et al., Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes, SCR MATER, 44(8-9), 2001, pp. 1687-1693
Citation: Mg. Madhan et al., A unified approach to study the thermal dynamics in multilongitudinal modesemiconductor lasers, FIBER IN OP, 20(2), 2001, pp. 159-169
Citation: M. Manimaran et al., Electroluminescent device based on AlxGa1-xAs-GaAs quantum well nanostructures, OPT QUANT E, 32(10), 2000, pp. 1191-1199
Citation: M. Manimaran et al., Photon emission from the nanostructures of AlxGa1-xAs-GaAs produced by conventional lithographic and reactive ion-etching techniques, J LUMINESC, 87-9, 2000, pp. 1158-1161
Citation: M. Manimaran et Pr. Vaya, Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy, MICROELEC J, 30(9), 1999, pp. 899-903
Citation: Pr. Vaya et R. Srinivasan, Simulation study of strained layer CdxZn1-xTe-ZnTe quantum well laser structures, MAT SCI E B, 57(1), 1998, pp. 71-75