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Results: 5

Authors: Hull, BA Mohney, SE Venugopalan, HS Ramer, JC
Citation: Ba. Hull et al., Influence of oxygen on the activation of p-type GaN, APPL PHYS L, 76(16), 2000, pp. 2271-2273

Authors: Venugopalan, HS Mohney, SE DeLucca, JM Molnar, RJ
Citation: Hs. Venugopalan et al., Approaches to designing thermally stable Schottky contacts to n-GaN, SEMIC SCI T, 14(9), 1999, pp. 757-761

Authors: DeLucca, JM Venugopalan, HS Mohney, SE Karlicek, RF
Citation: Jm. Delucca et al., Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN (vol 73, pg 3402, 1998), APPL PHYS L, 74(14), 1999, pp. 2093-2093

Authors: Venugopalan, HS Mohney, SE
Citation: Hs. Venugopalan et Se. Mohney, Thermally stable rhenium Schottky contacts to n-GaN, APPL PHYS L, 73(9), 1998, pp. 1242-1244

Authors: DeLucca, JM Venugopalan, HS Mohney, SE Karlicek, RF
Citation: Jm. Delucca et al., Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN, APPL PHYS L, 73(23), 1998, pp. 3402-3404
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