ACNP - Italian Periodicals Catalogue

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Results: 1-14 |

Results: 14

High temperature annealing of Er implanted GaN

Authors: Alves, E Monteiro, T Soares, J Santos, L da Silva, MF Soares, JC Lojkowski, W Kolesnikov, D Vianden, R Correia, JG

Citation: E. Alves et al., High temperature annealing of Er implanted GaN, MAT SCI E B, 81(1-3), 2001, pp. 132-135

Annealing behaviour of GaN after implantation with hafnium and indium

Authors: Lorenz, K Ruske, F Vianden, R

Citation: K. Lorenz et al., Annealing behaviour of GaN after implantation with hafnium and indium, PHYS ST S-B, 228(1), 2001, pp. 331-335

Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films

Authors: Wruck, D Lorenz, K Vianden, R Reinhold, B Mahnke, HE Baranowski, JM Pakula, K Parthier, L Henneberger, F

Citation: D. Wruck et al., Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films, SEMIC SCI T, 16(11), 2001, pp. L77-L80

Defect trapping and annealing for transition metal implants in group III nitrides

Authors: Lorenz, K Vianden, R Pearton, SJ Abernathy, CR Zavada, JM

Citation: K. Lorenz et al., Defect trapping and annealing for transition metal implants in group III nitrides, MRS I J N S, 5(5), 2000, pp. 1-7

Quadrupole interaction in ternary chalcopyrite semiconductors: Experimentsand theory

Authors: Dietrich, M Burchard, A Degering, D Deicher, M Kortus, J Magerle, R Moller, A Samokhvalov, V Unterricker, S Vianden, R

Citation: M. Dietrich et al., Quadrupole interaction in ternary chalcopyrite semiconductors: Experimentsand theory, Z NATURFO A, 55(1-2), 2000, pp. 256-260

Hall effect measurements on transmutation doped semiconductors

Authors: von Nathusius, C Vianden, R

Citation: C. Von Nathusius et R. Vianden, Hall effect measurements on transmutation doped semiconductors, HYPER INTER, 129(1-4), 2000, pp. 391-400

Hall effect measurements on transmutation doped semiconductors

Authors: von Nathusius, C Vianden, R

Citation: C. Von Nathusius et R. Vianden, Hall effect measurements on transmutation doped semiconductors, HYPER INTER, 129(1-4), 2000, pp. 391-400

RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates

Authors: Lorenz, K Vianden, R Birkhahn, R Steckl, AJ da Silva, MF Soares, JC Alves, E

Citation: K. Lorenz et al., RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates, NUCL INST B, 161, 2000, pp. 946-951

Structural defects in congruent and near-stoichiometric LiNbO3

Authors: Marques, JG Kling, A Soares, JC Da Silva, MF Vianden, R Polgar, K Dieguez, E Agullo-Lopez, F

Citation: Jg. Marques et al., Structural defects in congruent and near-stoichiometric LiNbO3, RADIAT EFF, 150(1-4), 1999, pp. 233-236

Cavities in silicon investigated with the PAC-probe In-111

Authors: Bartels, J Noll, C Vianden, R

Citation: J. Bartels et al., Cavities in silicon investigated with the PAC-probe In-111, HYPER INTER, 121(1-8), 1999, pp. 353-358

Incorporation of the transition metal Hf into GaN

Authors: Bartels, J Freitag, K Marques, JG Soares, JC Vianden, R

Citation: J. Bartels et al., Incorporation of the transition metal Hf into GaN, HYPER INTER, 121(1-8), 1999, pp. 397-402

Electric field gradients at the In-111 site in the ferroelectric and paraelectric phases of LiTaO3

Authors: Marques, JG Kling, A de Jesus, CM Soares, JC Friedsam, P Freitag, K Vianden, R

Citation: Jg. Marques et al., Electric field gradients at the In-111 site in the ferroelectric and paraelectric phases of LiTaO3, HYPER INTER, 121(1-8), 1999, pp. 485-489

Ion beam and photoluminescence studies of Er and O implanted GaN

Authors: Alves, E da Silva, MF Soares, JC Vianden, R Bartels, J Kozanecki, A

Citation: E. Alves et al., Ion beam and photoluminescence studies of Er and O implanted GaN, NUCL INST B, 147(1-4), 1999, pp. 383-387

Implantation-induced amorphization of InP characterized with perturbed angular correlation

Authors: Bezakova, E Byrne, AP Glover, CJ Ridgway, MC Vianden, R

Citation: E. Bezakova et al., Implantation-induced amorphization of InP characterized with perturbed angular correlation, APPL PHYS L, 75(13), 1999, pp. 1923-1925

Risultati: 1-14 |