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Results: 1-8 |
Results: 8
Investigation of flicker noise and deep-levels in GaN/AlGaN transistors
Authors: Balandin, A Wang, KL Cai, S Li, R Viswanathan, CR Wang, EN Wojtowicz, M
Citation: A. Balandin et al., Investigation of flicker noise and deep-levels in GaN/AlGaN transistors, J ELEC MAT, 29(3), 2000, pp. 297-301
Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's
Authors: Mahapatra, S Parikh, CD Rao, VR Viswanathan, CR Vasi, J
Citation: S. Mahapatra et al., Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's, IEEE DEVICE, 47(4), 2000, pp. 789-796
A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique
Authors: Mahapatra, S Parikh, CD Rao, VR Viswanathan, CR Vasi, J
Citation: S. Mahapatra et al., A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique, IEEE DEVICE, 47(1), 2000, pp. 171-177
Plasma-induced damage
Authors: Viswanathan, CR
Citation: Cr. Viswanathan, Plasma-induced damage, MICROEL ENG, 49(1-2), 1999, pp. 65-81
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Authors: Mahapatra, S Parikh, CD Vasi, J Rao, VR Viswanathan, CR
Citation: S. Mahapatra et al., A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 915-922
Polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides (vol 41, pg 995, 1997)
Authors: Brozek, T Szyper, EC Viswanathan, CR
Citation: T. Brozek et al., Polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides (vol 41, pg 995, 1997), SOL ST ELEC, 43(3), 1999, pp. 693-696
Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
Authors: Balandin, A Morozov, SV Cai, S Li, R Wang, KL Wijeratne, G Viswanathan, CR
Citation: A. Balandin et al., Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications, IEEE MICR T, 47(8), 1999, pp. 1413-1417
Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
Authors: Balandin, A Morozov, S Wijeratne, G Cai, SJ Li, R Li, J Wang, KL Viswanathan, CR Dubrovskii, Y
Citation: A. Balandin et al., Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors, APPL PHYS L, 75(14), 1999, pp. 2064-2066
Risultati: 1-8 |