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Results: 1-14 |
Results: 14
Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE
Authors: Bolhovityanov, YB Pchelyakov, OP Sokolov, LV Nikiforov, AI Voigtlander, B
Citation: Yb. Bolhovityanov et al., Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE, IAN FIZ, 65(2), 2001, pp. 180-186
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
Authors: Voigtlander, B
Citation: B. Voigtlander, Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth, SURF SCI R, 43(5-8), 2001, pp. 127
Combination of a Besocke-type scanning tunneling microscope with a scanning electron microscope
Authors: Emundts, A Coenen, P Pirug, G Voigtlander, B Bonzel, HP Wynblatt, P
Citation: A. Emundts et al., Combination of a Besocke-type scanning tunneling microscope with a scanning electron microscope, REV SCI INS, 72(9), 2001, pp. 3546-3551
Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
Authors: Pchelyakov, OP Bolkhovityanov, YB Dvurechenskii, AV Sokolov, LV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties, SEMICONDUCT, 34(11), 2000, pp. 1229-1247
Molecular beam epitaxy of nanostructures based on silicon and germanium
Authors: Pchelyakov, OP Bolkhovityanov, YB Sokolov, LV Nikiforov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of nanostructures based on silicon and germanium, IAN FIZ, 64(2), 2000, pp. 205-214
Molecular beam epitaxy of silicon-germanium nanostructures
Authors: Pchelyakov, OP Bolkhovityanova, YB Dvurechenskii, AV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of silicon-germanium nanostructures, THIN SOL FI, 367(1-2), 2000, pp. 75-84
Measurement of Sb diffusion using shadow profiles created by a STM tip
Authors: Voigtlander, B Kastner, M
Citation: B. Voigtlander et M. Kastner, Measurement of Sb diffusion using shadow profiles created by a STM tip, SURF SCI, 464(2-3), 2000, pp. 131-144
Ordered growth of Ge islands above a misfit dislocation network in a Ge layer on Si(111)
Authors: Voigtlander, B Theuerkauf, N
Citation: B. Voigtlander et N. Theuerkauf, Ordered growth of Ge islands above a misfit dislocation network in a Ge layer on Si(111), SURF SCI, 461(1-3), 2000, pp. L575-L580
Direct observation of subcritical fluctuations during the formation of strained semiconductor islands
Authors: Jesson, DE Kastner, M Voigtlander, B
Citation: De. Jesson et al., Direct observation of subcritical fluctuations during the formation of strained semiconductor islands, PHYS REV L, 84(2), 2000, pp. 330-333
Scanning tunneling microscopy tip shape imaging by "shadowing": Monitoringof in situ tip preparation
Authors: Voigtlander, B Kastner, M
Citation: B. Voigtlander et M. Kastner, Scanning tunneling microscopy tip shape imaging by "shadowing": Monitoringof in situ tip preparation, J VAC SCI B, 17(2), 1999, pp. 294-296
Scanning tunneling microscopy studies during semiconductor growth
Authors: Voigtlander, B
Citation: B. Voigtlander, Scanning tunneling microscopy studies during semiconductor growth, MICRON, 30(1), 1999, pp. 33-39
Evolution of the strain relaxation in a Ge layer on Si(001) by reconstruction and intermixing
Authors: Voigtlander, B Kastner, M
Citation: B. Voigtlander et M. Kastner, Evolution of the strain relaxation in a Ge layer on Si(001) by reconstruction and intermixing, PHYS REV B, 60(8), 1999, pp. R5121-R5124
Magic islands and barriers to attachment: A Si/Si(111)7x7 growth model
Authors: Myslivecek, J Jarolimek, T Smilauer, P Voigtlander, B Kastner, M
Citation: J. Myslivecek et al., Magic islands and barriers to attachment: A Si/Si(111)7x7 growth model, PHYS REV B, 60(19), 1999, pp. 13869-13873
Kinetically self-limiting growth of Ge islands on Si(001)
Authors: Kastner, M Voigtlander, B
Citation: M. Kastner et B. Voigtlander, Kinetically self-limiting growth of Ge islands on Si(001), PHYS REV L, 82(13), 1999, pp. 2745-2748
Risultati: 1-14 |