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Results: 1-9 |
Results: 9
Models of paracrystalline silicon with a defect-free bandgap
Authors: Nakhmanson, SM Mousseau, N Barkema, GT Voyles, PM Drabold, DA
Citation: Sm. Nakhmanson et al., Models of paracrystalline silicon with a defect-free bandgap, INT J MOD B, 15(24-25), 2001, pp. 3253-3257
Realistic models of paracrystalline silicon - art. no. 235207
Authors: Nakhmanson, SM Voyles, PM Mousseau, N Barkema, GT Drabold, DA
Citation: Sm. Nakhmanson et al., Realistic models of paracrystalline silicon - art. no. 235207, PHYS REV B, 6323(23), 2001, pp. 5207
Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature
Authors: Voyles, PM Gerbi, JE Treacy, MMJ Gibson, JM Abelson, JR
Citation: Pm. Voyles et al., Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature, PHYS REV L, 86(24), 2001, pp. 5514-5517
Increased medium-range order in amorphous silicon with increased substratetemperature
Authors: Voyles, PM Gerbi, JE Treacy, MMJ Gibson, JM Abelson, JR
Citation: Pm. Voyles et al., Increased medium-range order in amorphous silicon with increased substratetemperature, J NON-CRYST, 293, 2001, pp. 45-52
Structure and physical properties of paracrystalline atomistic models of amorphous silicon
Authors: Voyles, PM Zotov, N Nakhmanson, SM Drabold, DA Gibson, JM Treacy, MMJ Keblinski, P
Citation: Pm. Voyles et al., Structure and physical properties of paracrystalline atomistic models of amorphous silicon, J APPL PHYS, 90(9), 2001, pp. 4437-4451
Atom pair persistence in disordered materials from fluctuation microscopy
Authors: Gibson, JM Treacy, MMJ Voyles, PM
Citation: Jm. Gibson et al., Atom pair persistence in disordered materials from fluctuation microscopy, ULTRAMICROS, 83(3-4), 2000, pp. 169-178
Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models
Authors: Treacy, MMJ Voyles, PM Gibson, JM
Citation: Mmj. Treacy et al., Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models, J NON-CRYST, 266, 2000, pp. 150-155
Fluctuation microscopy: a probe of atomic correlations in disordered materials
Authors: Voyles, PM Gibson, JM Treacy, MMJ
Citation: Pm. Voyles et al., Fluctuation microscopy: a probe of atomic correlations in disordered materials, J ELEC MICR, 49(2), 2000, pp. 259-266
Method for detecting subtle spatial structures by fluctuation microscopy
Authors: Iwai, T Voyles, PM Gibson, JM Oono, Y
Citation: T. Iwai et al., Method for detecting subtle spatial structures by fluctuation microscopy, PHYS REV B, 60(1), 1999, pp. 191-200
Risultati: 1-9 |