Citation: Sp. Wainwright et al., ANALYSIS OF SI-GE HETEROJUNCTION INTEGRATED INJECTION LOGIC ((IL)-L-2) STRUCTURES USING A STORED CHARGE MODEL, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2437-2447
Citation: Sp. Wainwright et D. Gould, NONADHERENCE WITH MEDICATIONS IN ORGAN TRANSPLANT PATIENTS - A LITERATURE-REVIEW, Journal of advanced nursing, 26(5), 1997, pp. 968-977
Citation: M. Fallon et al., STRESS AND QUALITY-OF-LIFE IN THE RENAL-TRANSPLANT PATIENT - A PRELIMINARY INVESTIGATION, Journal of advanced nursing, 25(3), 1997, pp. 562-570
Citation: Sp. Wainwright, LUCKMANNS CORE PRINCIPLES AND PRACTICE OF MEDICAL-SURGICAL NURSING - POLAASKI,AL, TATRO,SE, Journal of advanced nursing, 25(3), 1997, pp. 643-643
Citation: S. Collingsworth et al., PATIENT SELF-ADMINISTRATION OF MEDICATION - A REVIEW OF LITERATURE, International journal of nursing studies, 34(4), 1997, pp. 256-269
Citation: Sp. Wainwright et D. Gould, ENDOTRACHEAL SUCTIONING - AN EXAMPLE OF THE PROBLEMS OF RELEVANCE ANDRIGOUR IN CLINICAL RESEARCH, Journal of clinical nursing, 5(6), 1996, pp. 389-398
Citation: Sp. Wainwright, MAKING SENSE OF ILLNESS - THE SOCIAL-PSYCHOLOGY OF HEALTH AND DISEASE- RADLEY,A, Journal of clinical nursing, 5(3), 1996, pp. 201-201
Citation: Sp. Wainwright et al., THE EFFECT OF SERIES RESISTANCE ON THRESHOLD VOLTAGE MEASUREMENT TECHNIQUES FOR FULLY DEPLETED SOI MOSFETS, Solid-state electronics, 39(1), 1996, pp. 89-94
Citation: S. Hall et Sp. Wainwright, ON ELECTRON CONDUCTION AND TRAPPING IN SIMOX DIELECTRIC (VOL 143, PG 3354, 1996), Journal of the Electrochemical Society, 143(12), 1996, pp. 4129-4129
Citation: S. Hall et Sp. Wainwright, ON ELECTRON CONDUCTION AND TRAPPING IN SIMOX DIELECTRIC, Journal of the Electrochemical Society, 143(10), 1996, pp. 3354-3358
Citation: Sp. Wainwright, LIVER-TRANSPLANTATION - PRACTICE AND MANAGEMENT - NEUBERGER,J, LUCEY,MR, Journal of advanced nursing, 22(4), 1995, pp. 817-818
Citation: Sp. Wainwright et al., ELECTRICAL CHARACTERIZATION OF THIN-FILM, THIN BURIED OXIDE SIMOX SOISUBSTRATES PRODUCED BY LOW-ENERGY, LOW-DOSE IMPLANTATION, Semiconductor science and technology, 9(7), 1994, pp. 1404-1413
Citation: Sp. Wainwright et S. Hall, INTERPRETATION OF HIGH-FIELD CURRENT-VOLTAGE AND BREAKDOWN CHARACTERISTICS IN SOI SUBSTRATES FORMED USING SIMOX TECHNOLOGY, Semiconductor science and technology, 8(10), 1993, pp. 1854-1856
Citation: Sp. Wainwright et al., A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY, Microelectronic engineering, 22(1-4), 1993, pp. 399-402