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Results: 1-21 |
Results: 21
GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2.05 MU-M WITH 0.6-W DIFFRACTION-LIMITED POWER
Authors: CHOI HK WALPOLE JN TURNER GW CONNORS MK MISSAGGIA LJ MANFRA MJ
Citation: Hk. Choi et al., GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2.05 MU-M WITH 0.6-W DIFFRACTION-LIMITED POWER, IEEE photonics technology letters, 10(7), 1998, pp. 938-940
1.5-MU-M TAPERED-GAIN-REGION LASERS WITH HIGH-CW OUTPUT POWERS
Authors: DONNELLY JP WALPOLE JN GROVES SH BAILEY RJ MISSAGGIA LJ NAPOLEONE A REEDER RE COOK CC
Citation: Jp. Donnelly et al., 1.5-MU-M TAPERED-GAIN-REGION LASERS WITH HIGH-CW OUTPUT POWERS, IEEE photonics technology letters, 10(10), 1998, pp. 1377-1379
SEMICONDUCTOR-LASER SOURCES FOR EXTERNALLY MODULATED MICROWAVE ANALOGLINKS
Authors: BETTS GE DONNELLY JP WALPOLE JN GROVES SH ODONNELL FJ MISSAGGIA LJ BAILEY RJ NAPOLEONE A
Citation: Ge. Betts et al., SEMICONDUCTOR-LASER SOURCES FOR EXTERNALLY MODULATED MICROWAVE ANALOGLINKS, IEEE transactions on microwave theory and techniques, 45(8), 1997, pp. 1280-1287
SIMPLE COMPACT DIODE-LASER MICROLENS PACKAGING/
Authors: LIAU ZL TSANG DZ WALPOLE JN
Citation: Zl. Liau et al., SIMPLE COMPACT DIODE-LASER MICROLENS PACKAGING/, IEEE journal of quantum electronics, 33(3), 1997, pp. 457-461
LASER-ASSISTED FOCUSED-ION-BEAM-INDUCED DEPOSITION OF COPPER
Authors: FUNATSU J THOMPSON CV MELNGAILIS J WALPOLE JN
Citation: J. Funatsu et al., LASER-ASSISTED FOCUSED-ION-BEAM-INDUCED DEPOSITION OF COPPER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 179-180
DIFFRACTION-LIMITED 1.3-MU-M-WAVELENGTH TAPERED-GAIN-REGION LASERS WITH GREATER-THAN-1-W CW OUTPUT POWER
Authors: WALPOLE JN DONNELLY JP GROVES SH MISSAGGIA LJ WOODHOUSE JD BAILEY RJ NAPOLEONE A
Citation: Jn. Walpole et al., DIFFRACTION-LIMITED 1.3-MU-M-WAVELENGTH TAPERED-GAIN-REGION LASERS WITH GREATER-THAN-1-W CW OUTPUT POWER, IEEE photonics technology letters, 8(11), 1996, pp. 1429-1431
HIGH-POWER 1.3-MU-M INGAASP-INP AMPLIFIERS WITH TAPERED GAIN REGIONS
Authors: DONNELLY JP WALPOLE JN BETTS GE GROVES SH WOODHOUSE JD ODONELL FJ MISSAGGIA LJ BAILEY RJ NAPOLEONE A
Citation: Jp. Donnelly et al., HIGH-POWER 1.3-MU-M INGAASP-INP AMPLIFIERS WITH TAPERED GAIN REGIONS, IEEE photonics technology letters, 8(11), 1996, pp. 1450-1452
SEMICONDUCTOR AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS
Authors: WALPOLE JN
Citation: Jn. Walpole, SEMICONDUCTOR AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS, Optical and quantum electronics, 28(6), 1996, pp. 623-645
LIGHT-SCATTERING IN HIGH-DISLOCATION-DENSITY GAN
Authors: LIAU ZL AGGARWAL RL MAKI PA MOLNAR RJ WALPOLE JN WILLIAMSON RC MELNGAILIS I
Citation: Zl. Liau et al., LIGHT-SCATTERING IN HIGH-DISLOCATION-DENSITY GAN, Applied physics letters, 69(12), 1996, pp. 1665-1667
FABRICATION OF 2-SIDED ANAMORPHIC MICROLENSES AND DIRECT COUPLING OF TAPERED HIGH-POWER DIODE-LASER TO SINGLE-MODE FIBER
Authors: LIAU ZL WALPOLE JN LIVAS JC KINTZER ES MULL DE MISSAGGIA LJ DINATALE WF
Citation: Zl. Liau et al., FABRICATION OF 2-SIDED ANAMORPHIC MICROLENSES AND DIRECT COUPLING OF TAPERED HIGH-POWER DIODE-LASER TO SINGLE-MODE FIBER, IEEE photonics technology letters, 7(11), 1995, pp. 1315-1317
NEAR-DIFFRACTION-LIMITED HIGH-POWER (SIMILAR-TO-1W) SINGLE LONGITUDINAL MODE CW DIODE-LASER TUNABLE FROM 960 TO 980NM
Authors: JONES RJ GUPTA S JAIN RK WALPOLE JN
Citation: Rj. Jones et al., NEAR-DIFFRACTION-LIMITED HIGH-POWER (SIMILAR-TO-1W) SINGLE LONGITUDINAL MODE CW DIODE-LASER TUNABLE FROM 960 TO 980NM, Electronics Letters, 31(19), 1995, pp. 1668-1669
SINGLE-MODE OPTICAL-FIBER COUPLING OF HIGH-POWER TAPERED GAIN REGION DEVICES
Authors: LIVAS JC CHINN SR KINTZER ES WALPOLE JN WANG CA MISSAGGIA LJ
Citation: Jc. Livas et al., SINGLE-MODE OPTICAL-FIBER COUPLING OF HIGH-POWER TAPERED GAIN REGION DEVICES, IEEE photonics technology letters, 6(3), 1994, pp. 422-424
STRAINED-LAYER INGAASP DIODE-LASERS WITH TAPERED GAIN REGION FOR OPERATION AT LAMBDA=1.3-MU-M
Authors: GROVERS SH DONNELLY JP WALPOLE JN WOODHOUSE JD MISSAGGIA LJ BAILEY RJ NAPOLEONE A
Citation: Sh. Grovers et al., STRAINED-LAYER INGAASP DIODE-LASERS WITH TAPERED GAIN REGION FOR OPERATION AT LAMBDA=1.3-MU-M, IEEE photonics technology letters, 6(11), 1994, pp. 1286-1288
HIGH-POWER, HIGH-TEMPERATURE INGAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL DIODE-LASERS
Authors: WANG CA CHOI HK WALPOLE JN EVANS GA REICHERT WF CHOW WW FULLER CT
Citation: Ca. Wang et al., HIGH-POWER, HIGH-TEMPERATURE INGAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL DIODE-LASERS, Electronics Letters, 30(8), 1994, pp. 646-648
HIGH-POWER ERBIUM-DOPED FIBER AMPLIFIER WITH 975NM TAPERED-GAIN-REGION LASER PUMPS
Authors: LIVAS JC CHINN SR KINTZER ES WALPOLE JN WANG CA MISSAGGIA LJ
Citation: Jc. Livas et al., HIGH-POWER ERBIUM-DOPED FIBER AMPLIFIER WITH 975NM TAPERED-GAIN-REGION LASER PUMPS, Electronics Letters, 30(13), 1994, pp. 1054-1055
ACCURATE FABRICATION OF ANAMORPHIC MICROLENSES AND EFFICIENT COLLIMATION OF TEMPERED UNSTABLE-RESONATOR DIODE-LASERS
Authors: LIAU ZL WALPOLE JN MULL DE DENNIS CL MISSAGGIA LJ
Citation: Zl. Liau et al., ACCURATE FABRICATION OF ANAMORPHIC MICROLENSES AND EFFICIENT COLLIMATION OF TEMPERED UNSTABLE-RESONATOR DIODE-LASERS, Applied physics letters, 64(25), 1994, pp. 3368-3370
CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING FOLDED-CAVITY INGAAS ALGAAS DIODE-LASERS/
Authors: DONNELLY JP GOODHUE WD WANG CA BAILEY RJ LINCOLN GA JOHNSON GD MISSAGGIA LJ WALPOLE JN
Citation: Jp. Donnelly et al., CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING FOLDED-CAVITY INGAAS ALGAAS DIODE-LASERS/, IEEE photonics technology letters, 5(7), 1993, pp. 747-750
HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS
Authors: KINTZER ES WALPOLE JN CHINN SR WANG CA MISSAGGIA LJ
Citation: Es. Kintzer et al., HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS, IEEE photonics technology letters, 5(6), 1993, pp. 605-608
GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M
Authors: CHOI HK WALPOLE JN TURNER GW EGLASH SJ MISSAGGIA LJ CONNORS MK
Citation: Hk. Choi et al., GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M, IEEE photonics technology letters, 5(10), 1993, pp. 1117-1119
CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING ALGAAS DIODE-LASERS WITH DRY-ETCHED VERTICAL FACETS AND PARABOLIC DEFLECTING MIRRORS
Authors: DONNELLY JP GOODHUE WD WANG CA BAILEY RJ LINCOLN GA JOHNSON GD MISSAGGIA LJ WALPOLE JN
Citation: Jp. Donnelly et al., CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING ALGAAS DIODE-LASERS WITH DRY-ETCHED VERTICAL FACETS AND PARABOLIC DEFLECTING MIRRORS, IEEE photonics technology letters, 5(10), 1993, pp. 1146-1149
1 GBIT S COHERENT OPTICAL COMMUNICATION-SYSTEM USING A 1-W OPTICAL POWER-AMPLIFIER/
Authors: ALEXANDER SB KINTZER ES LIVAS JC WALPOLE JN WANG CA MISSAGGIA LJ CHINN SR
Citation: Sb. Alexander et al., 1 GBIT S COHERENT OPTICAL COMMUNICATION-SYSTEM USING A 1-W OPTICAL POWER-AMPLIFIER/, Electronics Letters, 29(1), 1993, pp. 114-115
Risultati: 1-21 |